Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si

Valanoor, Nagarajan; Stanishevsky, Andrei; Le, Chen; Zhao, Tong; Liu, B.-T.; Melngailis, J.; Roytburd, Alexander L.; Ramesh, R.; Finder, J.; Yu, Zhiyi; Droopad, R.; Eisenbeiser, K.

doi:10.1063/1.1516857

Cited by 117 publications

(91 citation statements)

References 14 publications

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“…Reducing clamping by decreasing the lateral size of a ferroelectric island leads to the increase of piezoeffect for both single-domain and polydomain films, but the magnitudes of the increase are significantly different. For a single-domain film, d 33 approaches the value of a bulk crystal as it is observed experimentally [20,31,34]. For a polydomain film, the extrinsic effect due to domain wall movement is itself a result of clamping.…”

Section: Discussionsupporting

confidence: 55%

Effect of elastic domains on electromechanical response of epitaxial ferroelectric films with a three-domain architecture

et al. 2013

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Thermodynamics of (001) epitaxial ferroelectric films completely relaxed due to the formation of elastic domains with a three-domain architecture is presented. The polydomain structure and electromechanical response of such films are analyzed for two cases corresponding to immobile and mobile elastic domain walls. It is shown that immobile elastic domains provide additional constraint which increases the mechanical and electrical clamping, thereby significantly reducing the piezoelectric and dielectric responses. On the other hand, a polydomain ferroelectric film adapts to the variations in the applied electric field by reversible domain wall displacements in the case of mobile domain walls. The comparison of the theory with experiments shows that the elastic domain walls are mobile in the fully relaxed films of ~ 1 m thickness. In addition, if the substrate constraint is reduced via decreasing lateral size of a polydomain ferroelectric film, its piezoresponse will increase dramatically, as is experimentally verified on small islands of polydomain ferroelectric films. The general conclusions can be readily applied to other constrained polydomain films.

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Section: Discussionsupporting

confidence: 55%

Effect of elastic domains on electromechanical response of epitaxial ferroelectric films with a three-domain architecture

et al. 2013

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“…Therefore, it is important to understand finite size effects in discrete ferroelectric islands fabricated on substrates. For example, the lateral size dependence of ferroelectric and piezoelectric properties of ferroelectric islands with lateral dimensions of 100nm-2µm fabricated by the top down methods has been investigated [1][2][3]. The size dependence was considered as extrinsic size effects derived from the clamping by substrates and 90 o domain wall movements [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

“…For example, the lateral size dependence of ferroelectric and piezoelectric properties of ferroelectric islands with lateral dimensions of 100nm-2µm fabricated by the top down methods has been investigated [1][2][3]. The size dependence was considered as extrinsic size effects derived from the clamping by substrates and 90 o domain wall movements [1][2][3]. Intrinsic size effects, in these reports, were not observed because the dimensions of islands fabricated by the top down methods were much larger than the size in which intrinsic size effects were observed in ultrafine particles [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Size Dependence of Ferroelectric Properties of Epitaxial PbTiO<sub>3</sub> Nanoislands on Pt/SrTiO<sub>3</sub>(100)

Fujisawa

Seioh

Hiki

et al. 2009

Trans. Mat. Res. Soc. Japan

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PbTiO 3 nanoislands were epitaxially grown on Pt/SrTiO 3 (100) by self-assembly using metalorganic chemical vapor deposition. The width and height of PbTiO 3 nanoislands ranged from 30 to 200nm, and from 2 to 30nm, respectively. Piezoelectric constant (d 33,PFM ) measured by piezoresponse force microscopy (PFM) rapidly decreased with the height when the height was less than 10nm, suggesting intrinsic size effects. PFM also revealed that the domain configuration was dependent on the width of nanoislands. The critical width for single domain was found to be 50nm.

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“…The piezoelectric measurements were carried out using a piezoresponse force microscope ͑PFM͒. 16 In general, the longitudinal piezoelectric coefficient ͑d 33 ͒ of thin or thick films is often influenced by the composition, orientation, and presence of non-180°domains. By fabricating ideal epitaxial films on suitable substrates, it could be possible to modify the domain orientations of PZT, and also their piezoresponse.…”

Section: -mentioning

confidence: 99%

Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates

Kim¹,

Eom

Valanoor³

et al. 2006

Applied Physics Letters

Self Cite

126

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We report the structural and longitudinal piezoelectric responses ͑d 33 ͒ of epitaxial Pb͑Zr 0.52 Ti 0.48 ͒O 3 ͑PZT͒ films on ͑001͒ SrTiO 3 and Si substrates in the thickness range of 40 nm-4 m. With increasing film thickness the tetragonality of PZT was reduced. The increase in d 33 value with increasing film thicknesses was attributed to the reduction of substrate constraints and softening of PZT due to reduced tetragonality. The d 33 values of PZT films on Si substrates ͑ϳ330 pm/ V͒ are higher than those on SrTiO 3 substrates ͑ϳ200 pm/ V͒. The epitaxial PZT films on silicon will lead to the fabrication of high performance piezoelectric microelectromechanical devices. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2185614͔ High strain piezoelectric materials have drawn much attention for the fabrication of microelectromechanical systems ͑MEMS͒, such as microactuators, micromotors, pressure transducers, strain gauges, and high-frequency ultrasound transducers.1-3 Pb͑Zr x Ti 1−x ͒O 3 ͑PZT͒ ceramics with composition ͑x = 0.45-0.5͒ close to the morphotrophic phase boundary ͑MPB͒ are the most commonly used piezoelectric material for various sensors and actuators. 4 With the increasing demand of micromechanical and nanomechanical devices, and their integration into Si technology, it is desirable to fabricate thick PZT films with high piezoelectric properties. Depending on various device dimensions and the frequency range it requires growing piezoelectric films with different thicknesses ͑1 -100 m͒. The key advantages of the thick films over bulk ceramics are the lower driving voltage with multilayer stacks and parallel wiring and high frequency applications.5 On the other hand, epitaxial thick films are expected to have enhanced piezoelectric characteristics over bulk ceramics due to their high crystalline quality, which will significantly improve the performance of highfrequency electromechanical devices.There has been substantial progress on the fabrication and understanding of the piezoelectric characteristics of PZT thin films. In most of the cases, the observed piezoelectric coefficients of the thin films were much lower ͑ϳ130 pm/ V͒ than the respective bulk PZT ceramics ͑ϳ220 pm/ V͒ and were explained by the substrate-induced constraints.6-10 Theoretically, Haun et al. 11 and Du et al. 12have predicted the d 33 value of rhombohedral PZT single crystals to be about 600 pm/ V. Recently, Nagarajan et al. 9observed a reduction of the substrate clamping effect on PZT thin films by patterning discrete islands, which facilitates the removal of the substrate-induced constraint. The same is desirable of high-quality epitaxial PZT thick films, which are expected to have a higher piezoelectric response for high performance electromechanical systems. In this letter, we report the fabrication of high-quality epitaxial PZT thick films up to 4 m on both ͑001͒ SrTiO 3 and ͑001͒ Si substrates with higher piezoresponse. We have also studied the thickness-dependent structural and piezoelectric properties with close correl...

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Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si

Cited by 117 publications

References 14 publications

Effect of elastic domains on electromechanical response of epitaxial ferroelectric films with a three-domain architecture

Effect of elastic domains on electromechanical response of epitaxial ferroelectric films with a three-domain architecture

Size Dependence of Ferroelectric Properties of Epitaxial PbTiO<sub>3</sub> Nanoislands on Pt/SrTiO<sub>3</sub>(100)

Thickness dependence of structural and piezoelectric properties of epitaxial Pb(Zr0.52Ti0.48)O3 films on Si and SrTiO3 substrates

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