Realizing high breakdown voltages (&gt;600 V) in partial SOI technology

Tadikonda, R.; Hardikar, S.; Narayanan, E.M. Sankara

doi:10.1016/j.sse.2004.04.005

Cited by 46 publications

(14 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Moreover, the first peaks are higher than the corresponding peaks at the drain end for both SOI and PSOI structures, implying that the RESURF effect is hardly to be perfectly achieved under small device dimensions and uniform doping drift region. Better RESURF can be achieved in devices of larger dimensions (Hu et al, 2012;Luo et al, 2008Luo et al, , 2010 or linear doping drift region (Guo, Li, & Zhang, 2006;Merchant, 1991;Shengdong, Sin, Lai, & Ko, 1999;Tadikonda et al, 2004), in which the surface electric fields at the source and drain ends are more symmetric and uniform. Figure 4(b).…”

Section: International Journal Of Electronics 39mentioning

confidence: 99%

“…In recent years, some novel high-voltage LDMOSFETs above 600 V have also been explored in PSOI technology (Duan, Zhang, & Li, 2005;Hu, Huang, Wang, 2008;Tadikonda, Hardikar, & Narayanan, 2004). However, the PSOI structures used in LDMOS have been mostly studied with thick (>1 μm) silicon films, and no detailed analysis on the kink effect has been reported.…”

Section: Introductionmentioning

confidence: 99%

“…>15 μm (Luo et al, 2010;Park et al, 2003;Tadikonda et al, 2004) and >100 μm (Luo et al, 2008). However, the tendency of device scaling down is irrefragable in semiconductor technology.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect

Wang

Chang

et al. 2013

International Journal of Electronics

View full text Add to dashboard Cite

Thin-film (TF) lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOSFET or LDMOS) of small dimensions on partial silicon-on-insulator (PSOI) with improved breakdown voltage and suppressed kink effect is introduced and studied. The silicon window and field plate can modulate the surface electric field of silicon film and, thus, their design parameters can be adjusted to achieve optimal breakdown voltage. Moreover, the silicon window can also provide a conduction path from the thin silicon film to the substrate and prevent hole accumulation in the floating body of silicon-on-insulator (SOI) devices, which can consequently suppress the kink effect. Effects of the device parameters (e.g. location of the field plate, location of silicon window, and doping concentrations of the drift region, silicon window and substrate) that control the performance of TF PSOI LDMOS are carefully studied. Compared with the conventional TF SOI LDMOS of small dimensions, the simulation results show that this proposed TF PSOI LDMOS exhibits approximately 100% improvement on the breakdown voltage and entirely eliminates the kink effect.

show abstract

Section: International Journal Of Electronics 39mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect

Wang

Chang

et al. 2013

International Journal of Electronics

View full text Add to dashboard Cite

show abstract

“…The main problem is low breakdown voltage and many structures are proposed to obtain high breakdown voltage [10][11][12].…”

Section: Introductionmentioning

confidence: 99%

A novel lateral diffused metal oxide semiconductor (LDMOS) by attracting the electric field Lines

Orouji

Hanaei

2015

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

“…Since enhancing the dielectric electric field is a feasible way to increase the BV, so several new structures have been proposed by using the enhanced dielectric layer field (ENDIF) principle, in which introducing interface charges is effective and attractive [2,3]. Based on the theoretical and experimental investigations of TSL SOI [4][5][6][7][8][9], a novel SOI SJ with an interface thin silicon layer is proposed in this Letter, which provides a higher BV than the conventional SOI SJ. The influences of structure parameters on BV are analysed by ISE [10] and special on-resistance (R on,sp ) is studied.…”

mentioning

confidence: 99%

SOI SJ high voltage device with linear variable doping interface thin silicon layer

Zhang

Qiao

et al. 2012

Electron. Lett.

View full text Add to dashboard Cite

A novel high concentration linear variable doping interface thin silicon layer (TSL) silicon-on-insulator (SOI) super junction (SJ) LDMOS is proposed. The design of the linear variable doping can deplete the high drift concentration. The proposed structure uses a TSL to achieve charge balance and eliminate substrate-assisted depletion effect. The dielectric electric field (E I ) and the breakdown voltage (BV) of the TSL SOI SJ are 530 V/mm and 552 V with 30 mm length drift region and 1 mm-thick dielectric layer, respectively, and the specific on-resistance (R on, sp ) is 0.03403 V . cm 2 and FOM (FOM ¼ BV 2 /R on,sp ) is 8.95 MW/cm 2 , when gate voltage is 5 V.Introduction: The SOI SJ can improve the trade-off characteristic between BV and R on,sp in a power device. But the substrate-assisted depletion (SAD) effect of SOI SJ upsets the delicate charge balance (CB) between the N and P pillars of the SOI SJ, which is the charge interaction between the SJ region and the substrate in the off-state. The charge imbalance between the pillars leads to the drop of BV in the SJ device, especially at high doping levels [1]. Since enhancing the dielectric electric field is a feasible way to increase the BV, so several new structures have been proposed by using the enhanced dielectric layer field (ENDIF) principle, in which introducing interface charges is effective and attractive [2,3]. Based on the theoretical and experimental investigations of TSL SOI [4-9], a novel SOI SJ with an interface thin silicon layer is proposed in this Letter, which provides a higher BV than the conventional SOI SJ. The influences of structure parameters on BV are analysed by ISE [10] and special on-resistance (R on,sp ) is studied.

show abstract

Realizing high breakdown voltages (>600 V) in partial SOI technology

Cited by 46 publications

References 8 publications

Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect

Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect

A novel lateral diffused metal oxide semiconductor (LDMOS) by attracting the electric field Lines

SOI SJ high voltage device with linear variable doping interface thin silicon layer

Contact Info

Product

Resources

About