Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite

Anyebe, Ezekiel; Sánchez, Ana; Hindmarsh, Steven A.; Chen, Xiao; Shao, Jianda; Rajpalke, Mohana K.; Veal, T. D.; Robinson, Benjamin J.; Kolosov, Oleg; Anderson, F.; Sundaram, Ramesh; Wang, Z. M.; Zhuang, Qiandong

doi:10.1021/acs.nanolett.5b00411

Cited by 37 publications

(31 citation statements)

References 56 publications

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“…Although the growth of Sb-based III-V NWs is more difficult than that of other III-V NWs, both 'top-down' and 'bottomup' approaches have been developed for the controllable growth of high-quality thin Sb-based III-V NWs in the past decade [6,42,52,63,[106][107][108][109][110][111]. 'Top-down' approach has been promoted in microelectronic industry.…”

Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning

confidence: 99%

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Recent advances in Sb-based III–V nanowires

et al. 2019

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Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sbbased III-V nanowires (NWs) attracted significant interests in high speed electronics, longwavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effecttransistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.

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Section: Recent Advances In the Synthesis Of Sb-based Iii-v Nwsmentioning

confidence: 99%

“…focus on both the full-composition-range growth of diameter and length controlled GaInSb NWs. [109]. For the monolithic integration with Si, InAsSb NWs have also been successfully grown directly on Si substrates [153].…”

Section: Sb-based Iii-v Ternary Alloy Nwsmentioning

confidence: 99%

Recent advances in Sb-based III–V nanowires

et al. 2019

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“…This is mainly due to the highly dense crystalline defects in the resulting NWs. Different epitaxial techniques have been adopted for high-quality InAsSb NW growth including molecular beam epitaxy (MBE), metal organic chemical vapour deposition (MOCVD) and chemical beam epitaxy (CBE) as well as catalyst-assisted and area selective epitaxy: (i) using MBE, InAsSb NWs were obtained with an Sb content of up to 10% by Zhuang et al on silicon [13,15] and graphite [16], up to 15% by Sourribes et al [17] and 35% grown on GaAs (111) by Potts et al [18]; (ii) using the MOCVD growth technique, catalyst-free InAsSb NWs with an Sb content of up to 43% have also been reported [19], while selective-area epitaxy on patterned InAs substrates recently demonstrated InAsSb NWs with an Sb content of 15% [14]; (iii) using MOCVD with Au-catalysis, InAsSb NWs with an Sb content of up to 77% have been obtained [20,21]; and (iv), using Au-catalyzed CBE, InAsSb NWs with a whole range of Sb have been realized [22]. Although there has been significant progress in increasing Sb incorporation, there has been no success in extending the emission wavelength above 4.0 μm.…”

Section: Some Figures May Appear In Colour Only In the Online Journal)mentioning

confidence: 99%

Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics

et al. 2017

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InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.

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“…The large and dense arrays of nanowires (NWs) vertically-aligned on a substrate are benecial for a wide range of applications, such as eld-emission displays, surface-enhanced Raman scattering (SERS), energy harvesting, optoelectronics, multiferroic systems, biosensors and nanomedicine, only to mention a few. [1][2][3][4][5][6][7][8]56 Besides, the tubular geometrical shape of the synthesized nanostructures may expand the range of multifunctional applications, as demonstrated using vertically-aligned forests of carbon nanotubes (NTs) and inorganic NTs. [9][10][11][12][13] In this regard, the arrays of homogeneous and heterostructured magnetic NTs have recently attracted a lot of interest, since they are promising for potential applications, such as magnetic bio-devices, anodes for lithium ion batteries and storage devices.…”

Section: Introductionmentioning

confidence: 99%