Realization of the high-performance THz GaAs homojunction detector below the frequency of Reststrahlen band

Bai, Pei Kang; Zhang, Y. H.; Guo, Xuguang; Fu, Zhanglong; Cao, Jun; Shen, Wei

doi:10.1063/1.5061696

Cited by 16 publications

(25 citation statements)

References 26 publications

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“…2a. This spectrum is identical with that of a single HIWIP detector if the threshold voltage is taken into account (the actual bias applied differs by 1.2 V) 27 . The spectrum shows a broadband photo-response from 150–680 cm −1 (4.2–20 THz) and the peak position is at ~18 THz.…”

Section: Resultsmentioning

confidence: 62%

“…In this work, a novel THz up-conversion device is realized, which is based on the integrated p-type GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector and LED for pixelless imaging 25,26 . The choice of a HIWIP detector allows normal incidence excitation thus bypassing the need for a grating coupler required for n-QWIP-LED device 27 . In addition, the HIWIP-LED up-converter shows a broadband photoresponse (4.2–20 THz) in contrast to the QWP-LED, which makes it general enough to be applied in more situations.…”

Section: Introductionmentioning

confidence: 99%

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Broadband THz to NIR up-converter for photon-type THz imaging

et al. 2019

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High performance terahertz imaging devices have drawn wide attention due to their significant application in healthcare, security of food and medicine, and nondestructive inspection, as well as national security applications. Here we demonstrate a broadband terahertz photon-type up-conversion imaging device, operating around the liquid helium temperature, based on the gallium arsenide homojunction interfacial workfunction internal photoemission (HIWIP)-detector-LED up-converter and silicon CCD. Such an imaging device achieves broadband response in 4.2–20 THz and can absorb the normal incident light. The peak responsivity is 0.5 AW −1 . The light emitting diode leads to a 72.5% external quantum efficiency improvement compared with the one widely used in conventional up-conversion devices. A peak up-conversion efficiency of 1.14 × 10 −2 is realized and the optimal noise equivalent power is 29.1 pWHz −1/2 . The up-conversion imaging for a 1000 K blackbody pin-hole is demonstrated. This work provides a different imaging scheme in the terahertz band.

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Section: Resultsmentioning

confidence: 62%

Section: Introductionmentioning

confidence: 99%

Broadband THz to NIR up-converter for photon-type THz imaging

et al. 2019

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“…In the mid-and far infrared ranges, it has been used in internal photoemissive detectors [8][9][10][11]. However, the responsivity of homojunction and heterojunction internal photoemission detectors rapidly falls off below 5 THz, essentially vanishing below ∼ 2.5 THz [12][13][14]. Furthermore, these three-dimensional, bulk photoemissive detectors are photoconductive and thus require an applied external bias [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

An in-plane photoelectric effect in two-dimensional electron systems for terahertz detection

Michailow¹,

Spencer²,

Almond³

et al. 2020

Preprint

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The photoelectric effect consists in the photoexcitation of electrons above a potential barrier at a material interface and is exploited for photodetection over a wide frequency range. This three-dimensional process has an inherent inefficiency: photoexcited electrons gain momenta predominantly parallel to the interface, while to leave the material they have to move perpendicular to it. Here, we report on the discovery of an in-plane photoelectric effect occurring within a two-dimensional electron gas. In this purely quantum-mechanical, scattering-free process, photoelectron momenta are perfectly aligned with the desired direction of motion. The "work function" is artificially created and tunable in-situ. The phenomenon is utilized to build a direct terahertz detector, which yields a giant zero-bias photoresponse that exceeds the predictions by known mechanisms by more than 10-fold. This new aspect of light-matter interaction in two-dimensional systems paves the way towards a new class of highly efficient photodetectors covering the entire terahertz range.

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“…Most importantly, the photon recycling in the cavity will cause severe distortion of the image. Optimization of the internal structure of the HIWIP may be an alternative approach to improve the detection efficiency [26]. But the thickened active region of the HIWIP may cause lateral diffusion of the carrier thereby inducing serious influence on imaging quality.…”

Section: Theoretical Optimization Of Ledmentioning

confidence: 99%

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

et al. 2021

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High-performance terahertz (THz) imaging devices have drawn wide attention due to their significant application in a variety of application fields. Recently, the upconversion device based on the integrated homo-junction interfacial workfunction internal photoemission detector and light-emitting diode (HIWIP-LED) has emerged as a promising candidate for broadband THz upconversion pixelless imaging device. In this paper, systematical investigations on the cryogenic-temperature performances of the LED part in HIWIP-LED devices, including electroluminescence (EL) spectra and the EL efficiency, have been carried out by elaborating the radiative recombination mechanism in the quantum well, internal quantum efficiency, and the light extraction efficiency (LEE) both experimentally and theoretically. On this basis, we have further studied the operation mode of the HIWIP-LED and concluded that the LEE could directly determine the upconversion efficiency. A numerical simulation has been performed to optimize the LEE. Numerical results show that the device with a micro-lens geometry structure could significantly improve the LEE of the LED thereby increasing the upconversion efficiency. An optimal upconversion efficiency value of 0.12 W/W and a minimum noise equivalent power (NEP) of 14 pW/Hz1/2 are achieved using the micro-lens structure together with anti-reflection coating. This work gives a precise description of cryogenic LED performance in the HIWIP-LED device and provides an optimization method for the broadband HIWIP-LED THz upconversion pixelless imaging device.

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Realization of the high-performance THz GaAs homojunction detector below the frequency of Reststrahlen band

Cited by 16 publications

References 26 publications

Broadband THz to NIR up-converter for photon-type THz imaging

Broadband THz to NIR up-converter for photon-type THz imaging

An in-plane photoelectric effect in two-dimensional electron systems for terahertz detection

Optimization of the Cryogenic Light-Emitting Diodes for High-Performance Broadband Terahertz Upconversion Imaging

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