Realization of synaptic learning and memory functions in Y₂O₃based memristive device fabricated by dual ion beam sputtering

Abstract

Single synaptic device with inherent learning and memory functions is demonstrated based on a forming-free amorphous YO (yttria) memristor fabricated by dual ion beam sputtering system. Synaptic functions such as nonlinear transmission characteristics, long-term plasticity, short-term plasticity and 'learning behavior (LB)' are achieved using a single synaptic device based on cost-effective metal-insulator-semiconductor (MIS) structure. An 'LB' function is demonstrated, for the first time in the literature, for a yttria based memristor, which bears a resemblance to certain memory functions of biological systems. The realization of key synaptic functions in a cost-effective MIS structure would promote much cheaper synapse for artificial neural network.

V₂C-Based Memristor for Applications of Low Power Electronic Synapse

“…At last, the Ag/V 2 C/TiO 2 /W structural devices were stimulated by modulating pulses to simulate the behaviors of biological synapses. In brief, the conductance value of the device responded to a successive positive and negative pulses, and the synaptic plasticity of LTP and LTD were successfully implemented [13], [28], [29]. During the entire measurement process, the pulse width and interval were both 20 ms.…”

Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field

“…Furthermore, Y 2 O 3 has emerged as a promising active material for preparing RRAM devices [ 10 , 11 , 12 ]. Forming-free RRAM devices can be prepared using oxygen vacancy (O v )–rich Y 2 O 3 [ 13 , 14 ]. The forming process requires an additional large voltage for the initial conductive filament (CF), occasionally resulting in electrode destruction.…”

Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System

“…Memristive devices have been considered one of the most promising candidates as a synaptic device thanks to their simple structure, low operating voltage, and fast switching speed, and the resistive switching behaviors by the redox reaction of oxide-based materials such as TiOx, TaOx, WOx, AlOx, HfOx, and PrxCa1-xMnO3 (PCMO) have been demonstrated [22][23][24][25][26][27][28][29][30]. In general, digital and analog switching behaviors in a memristive device can be obtained through the formation and rupture of conducting filaments by redox reactions and by oxidation-reduction or charge trapping-detrapping, respectively.…”