Realization of single and double axial InSb–GaSb heterostructure nanowires

Abstract

Heteroepitaxial growth of III‐Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au‐seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb–GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained. XEDS compositional line scans overlaid on STEM HAADF image along the InSb–GaSb–InSb nanowire indicating sharp interface from GaSb to InSb segment and graded interface in the opposite direction. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Diameter Control of GaSb Nanowires Revealed by In Situ Environmental Transmission Electron Microscopy

“…Regarding carrier mobility the most notable examples are InSb and GaSb, which display the highest electron and hole mobility among the III−V materials, respectively. 3 Despite the superior properties of this material platform, little research has been conducted in comparison to other III− V materials such as III−As nanowires. This is due to the low vapor pressure and surfactant properties of elemental Sb which negatively impact the ability to attain controlled growth of III− Sb nanowires.…”

Modeling the compositional profiles across axial InSb/GaInSb/InSb nanowire heterostructures

“…Owing to its versatility, gold still remains one of the most widespread catalyst elements [10]. Specifically, the possibility of growth of axial InSb/GaInSb/InSb heterostructures based on Au-catalyzed NWs has been demonstrated in [11]. However, self-catalyzed growth [12] (with a group III element contained in a growing NW serving as a catalyst) is becoming more and more common at present.…”

Моделирование профиля состава осевой гетероструктуры InSb/GaInSb/InSb в нитевидных нанокристаллах

“…В качестве катализатора одним из самых распространенных элементов остается золото благодаря его универсальности [10]. Так, возможность роста осевых гетероструктур InSb/GaInSb/InSb на основе Auкаталитических ННК была продемонстрирована в работе [11]. Однако в настоящее время все большую популярность набирает автокаталитический рост [12], когда катализатором роста является элемент III группы, входящий в состав выращиваемого ННК.…”