Realization of Minimum and Maximum Gate Function in Ta2O5-based Memristive Devices

Abstract

Redox-based resistive switching devices (ReRAM) are considered key enablers for future non-volatile memory and logic applications. Functionally enhanced ReRAM devices could enable new hardware concepts, e.g. logic-in-memory or neuromorphic applications. In this work, we demonstrate the implementation of ReRAM-based fuzzy logic gates using Ta2O5 devices to enable analogous Minimum and Maximum operations. The realized gates consist of two anti-serially connected ReRAM cells offering two inputs and one output. The cells offer an endurance up to 106 cycles. By means of exemplary input signals, each gate functionality is verified and signal constraints are highlighted. This realization could improve the efficiency of analogous processing tasks such as sorting networks in the future.

Valence Change Bipolar Resistive Switching Accompanied With Magnetization Switching in CoFe2O4 Thin Film

“…The Resistive Random Access Memory (ReRAM) devices, based on the Resistive Switching (RS) phenomena, are emerging as a potential candidate for the next generation memory devices due to low power consumption 1 , high operation speed 2 , high-density integration 3 , non-destructive readout 4 , favourable scalability 5 and good compatibility with complementary metal–oxide–semiconductor (CMOS) technology 6 . Besides memory applications, the ReRAM devices also offer a significant potential for use in the neuromorphic 7 and logic applications 8 . The resistive RAM devices consist of a simple capacitor-like structure constituted of an insulating/dielectric layer between two metallic electrodes (MIM type structure) 9 that exhibits reversible resistive switching on applying unipolar or bipolar voltages 10 .…”

Field‐ and irradiation‐induced phenomena in memristive nanomaterials

“…Among the typical applications of memristive devices, one should mention such successful implementations as a memory device on the basis of vertical integration of RRAM cells with the CMOS circuits in a 1T-1R architecture [13,14] or logic gates with high endurance realized using the complementary pairs of RRAM cells [15]. And artificial neural networks -elementary single-layer perceptrons -have already been demonstrated on the basis of solid-state memristive nanocrossbar arrays [16] or organic memristive devices [17].…”

Multilevel non‐volatile memory based on Al2O3/ZnO bilayer device

“…In the proposed device, the switching characteristics are resulting from the electrochemical metallisation process, where the filaments formation/rupture are due to the oxidation as well as reduction (REDOX) reactions take place at the top Ag/Al 2 O 3 interface [4, 24–27] and its extension towards the bulk Al 2 O 3 layer. Owing to the oxidation reaction, Ag cations are generated at TE, drift under electric field towards the bottom interface and reduce to form the metallic filament that results in driving the device to ON state as shown in Fig.…”