Multilevel non‐volatile memory based on Al<sub>2</sub>O<sub>3</sub>/ZnO bilayer device

Lekshmi, J. Arya; Kumar, T. Nandha; Jinesh, K. B.

doi:10.1049/mnl.2020.0335

Cited by 8 publications

(2 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Resistive random-access memories (RRAMs) have emerged as a promising candidate for future general-purpose memory applications due to their excellent performance, including high speed, power efficiency, scalability and friendly integration [1][2][3][4]. According to the composition of the conductive filament (CF), the device was mainly classified into two types, which were dominated by a valance change mechanism (VCM) [5,6] and an electrochemical metallization mechanism [7][8][9][10]. Both kinds of RRAM devices switch between a highresistance state (HRS) and a low-resistance state (LRS) to achieve data storage by formation and rupture of the CFs [11].…”

Section: Introductionmentioning

confidence: 99%

Investigation on the mechanism and a universal structural design method for resistive switching devices

Yang,

Ma,

Wan

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Resistive random-access memories have attracted significant attention in memory applications while its physical mechanism behind the resistive switching behavior is still unclear. As a key issue, the migration of oxygen vacancies (VO) directly influences the performance of device in the formation and rupture of conductive filaments. In this work, the distance of VO migration is performed as electric field dependent and affected the performance of the device. Sufficient distance of VO migration is essential for formation and rupture of CF completely, leading to ideally SET/RESET transition of the device. According to this mechanism, an enhanced electric field is designed and optimizes the stability of device significantly, which is demonstrated as a promising approach to optimize the properties of device. The investigation is helpful for guiding the designing of device structure.

show abstract

Section: Introductionmentioning

confidence: 99%

Investigation on the mechanism and a universal structural design method for resistive switching devices

Yang,

Ma,

Wan

et al. 2024

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…Even though several ZnO, Al2O3 and their bilayer structures have been reported in literature [16], [17], [18], [19], [20], none of them show complementary resistive switching characteristics. Hence in this work, the CRS behavior of Au/ZnO(10nm)/Al2O3(10nm)/Fluorine doped tin oxide (FTO) device has been reported for the first time.…”

Section: Introductionmentioning

confidence: 99%

Complementary Resistive Switching in ZnO/Al₂O₃ Bi-Layer Devices

Lekshmi

Kumar

Jinesh

2023

IEEE Trans. Nanotechnology

View full text Add to dashboard Cite

This paper reports the complementary resistive switching (CRS) characteristics exhibited by Au/ZnO/Al2O3/Fluorine doped tin oxide (FTO) bilayer device for the first time, where both ZnO and Al2O3 are active switching layers exhibiting resistive switching properties. The I-V characteristics of the device initially show bipolar resistive switching (BRS) for a few cycles (~12) before permanently switching to CRS with the extension of SET voltage. The stable CRS state of the device exhibits a high current of ~500 µA during the ONstate and low current of 3x10 -7 A during OFF-state at low input voltages (-0.5 V to 0.5V) enables the proposed device suitable to use in crossbar array to mitigate the sneak path current. The device performance to write and read processes is evaluated with pulses of magnitudes ~|2.5| V and 1.3 V, respectively, and showed a ~ 60µA difference in read-out current between data bits 0 and 1. Similarly, the device's power consumption is also measured to elucidate that the device is suitable to use as a memory unit with power consumption in the order of microwatts (µW). Further, the possible switching mechanism is demonstrated based on oxygen vacancies migration.

show abstract

Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

Zhang,

Guo,

Dai

et al. 2023

Ceramics International

View full text Add to dashboard Cite

Multilevel non‐volatile memory based on Al₂O₃/ZnO bilayer device

Cited by 8 publications

References 37 publications

Investigation on the mechanism and a universal structural design method for resistive switching devices

Investigation on the mechanism and a universal structural design method for resistive switching devices

Complementary Resistive Switching in ZnO/Al₂O₃ Bi-Layer Devices

Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

Contact Info

Product

Resources

About

Multilevel non‐volatile memory based on Al2O3/ZnO bilayer device

Cited by 8 publications

References 37 publications

Investigation on the mechanism and a universal structural design method for resistive switching devices

Investigation on the mechanism and a universal structural design method for resistive switching devices

Complementary Resistive Switching in ZnO/Al2O3 Bi-Layer Devices

Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

Contact Info

Product

Resources

About

Multilevel non‐volatile memory based on Al₂O₃/ZnO bilayer device

Complementary Resistive Switching in ZnO/Al₂O₃ Bi-Layer Devices