Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

Zhang, Wei; Guo, Zhen; Dai, Yixian; Lei, Jianzhang; Wang, Jun; Hu, Fangren

doi:10.1016/j.ceramint.2023.08.277

Cited by 6 publications

(7 citation statements)

References 40 publications

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“…Thus, a lower reset voltage is needed. Wei Zhang et al [29] also reported the same phenomenon when comparing the ZnO/HfO2 stack and the HfO2/ZnO stack with either Ti or Pt TE. For the cycling test in the TiN/Ti TE device, the bipolar switching is maintained over 110 cycles, as depicted in Figure 5a.…”

Section: Electrical Properties Of the Tin/ti Te And Pd Te Devicementioning

confidence: 60%

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The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode

Kwon,

Ko,

Byun

et al. 2024

Electronic Materials

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In this study, the bipolar switching behaviors in ZnO/HfO2 bilayer resistive random-access memory (RRAM), depending on different metal top electrodes (TE), are analyzed. For this purpose, devices with two types of TE–TiN/Ti and Pd, which have varying oxygen affinities, are fabricated. X-ray diffraction (XRD) analysis shows that ZnO has a hexagonal wurtzite structure, and HfO2 exhibits both monoclinic and orthorhombic phases. The average grain sizes are 10.9 nm for ZnO and 1.55 nm for HfO2. In regards to the electrical characteristics, the I–V curve, cycling test, and voltage stress are measured. The measurement results indicate that devices with TiN/Ti TE exhibit lower set and higher reset voltage and stable bipolar switching behavior. However, a device with Pd TE demonstrates higher set and lower reset voltage. This phenomenon can be explained by the Gibbs free energy of formation (∆Gf°). Additionally, the Pd TE device shows unstable bipolar switching characteristics, where unipolar switching occurs simultaneously during the cycling test. This instability in devices with Pd TE could potentially lead to soft errors in operation. For guaranteeing stable bipolar switching, the oxygen affinity of material for TE should be considered in regards to ZnO/HfO2 bilayer RRAM.

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Section: Electrical Properties Of the Tin/ti Te And Pd Te Devicementioning

confidence: 60%

“…Thus, a lower reset voltage is needed. Wei Zhang et al [29] also reported the same phenomenon when comparing the ZnO/HfO 2 stack and the HfO 2 /ZnO stack with either Ti or Pt TE.…”

Section: Electrical Properties Of the Tin/ti Te And Pd Te Devicementioning

confidence: 60%

The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode

Kwon,

Ko,

Byun

et al. 2024

Electronic Materials

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“…Jain et al reported that HfO x showcases a lower Gibbs free energy and a higher dielectric constant compared to ZnO, resulting in the formation of fewer oxygen vacancies. The interface between ZnO and HfO x promotes the creation and rupture of filaments, enhancing endurance stability by preventing the escape of oxygen vacancies from the electrode [34][35][36]. This insight suggests that incorporating HfO x in RRAM devices contributes to improved operational stability [37][38][39].…”

Section: Introductionmentioning

confidence: 94%

“…Contrastingly, the ZnO/HfOx device exhibits a distinct mechanism. Based on the previous studies reporting the conduction mechanisms in the ZnO/HfOx layered structure, a conduction mechanism focusing on the formation and rupture of the conductive filament at the ZnO and HfOx interface is proposed [35,36]. After the forming process, oxygen ions migrate to the TE to complete the reduction process, giving rise to an hourglass-shaped However, due to the inherent randomness of conducting filament, the ZnO single-layer device suffers from variation of resistance states during repeated cycles [47,48].…”

Section: Hf 4fmentioning

confidence: 99%

The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device

Noh,

Ju,

Cho

et al. 2023

Nanomaterials

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This study discusses the potential application of ITO/ZnO/HfOx/W bilayer-structured memory devices in neuromorphic systems. These devices exhibit uniform resistive switching characteristics and demonstrate favorable endurance (>102) and stable retention (>104 s). Notably, the formation and rupture of filaments at the interface of ZnO and HfOx contribute to a higher ON/OFF ratio and improve cycle uniformity compared to RRAM devices without the HfOx layer. Additionally, the linearity of potentiation and depression responses validates their applicability in neural network pattern recognition, and spike-timing-dependent plasticity (STDP) behavior is observed. These findings collectively suggest that the ITO/ZnO/HfOx/W structure holds the potential to be a viable memory component for integration into neuromorphic systems.

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“…Although the memristor-based synaptic device array can lead to faster parallel data processing using VMM, further research is required to minimize its power consumption. However, ReRAM has been studied for memory application [ 16 , 29 ], research on the device operation mechanism [ 29 , 30 , 31 ], and research on ReRAMs composed of materials that are not CMOS-compatible [ 32 , 33 ]. Thus, in this study, a memristor-based 2T synaptic device with a multilayer structure was proposed to reduce the operating power while maintaining high-density integration.…”

Section: Introductionmentioning

confidence: 99%

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

Kim,

Han,

Cho

et al. 2024

Nanomaterials

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A synaptic device with a multilayer structure is proposed to reduce the operating power of neuromorphic computing systems while maintaining a high-density integration. A simple metal–insulator–metal (MIM)-structured multilayer synaptic device is developed using an 8-inch wafer-based and complementary metal–oxide–semiconductor (CMOS) fabrication process. The three types of MIM-structured synaptic devices are compared to assess their effects on reducing the operating power. The obtained results exhibited low-power operation owing to the inserted layers acting as an internal resistor. The modulated operational conductance level and simple MIM structure demonstrate the feasibility of implementing both low-power operation and high-density integration in multilayer synaptic devices.

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Effects of stacking sequence and top electrode configuration on switching behaviors in ZnO-HfO2 hybrid resistive memories

Cited by 6 publications

References 40 publications

The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode

The Switching Characteristics in Bilayer ZnO/HfO2 Resistive Random-Access Memory, Depending on the Top Electrode

The Enhanced Performance of Neuromorphic Computing Hardware in an ITO/ZnO/HfOx/W Bilayer-Structured Memory Device

Internal Resistor Effect of Multilayer-Structured Synaptic Device for Low-Power Operation

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