Realization of III–V Semiconductor Periodic Nanostructures by Laser Direct Writing Technique

Abstract

In this paper, we demonstrated the fabrication of one-dimensional (1D) and two-dimensional (2D) periodic nanostructures on III–V GaAs substrates utilizing laser direct writing (LDW) technique. Metal thin films (Ti) and phase change materials (Ge2Sb2Te5 (GST) and Ge2Sb1.8Bi0.2Te5 (GSBT)) were chosen as photoresists to achieve small feature sizes of semiconductor nanostructures. A minimum feature size of about 50 nm about a quarter of the optical diffraction limit was obtained on the photoresists, and 1D III–V semiconductor nanolines with a minimum width of 150 nm were successfully acquired on the GaAs substrate which was smaller than the best results acquired on Si substrate ever reported. 2D nanosquare holes were fabricated as well by using Ti thin film as the photoresist, with a side width of about 200 nm, but the square holes changed to a rectangle shape when GST or GSBT was employed as the photoresist, which mainly resulted from the interaction of two cross-temperature fields induced by two scanning laser beams. The interacting mechanism of different photoresists in preparing periodic nanostructures with the LDW technique was discussed in detail.

Formation of β-Bi2O3 and δ-Bi2O3 during laser irradiation of Bi films studied in-situ by spatially resolved Raman spectroscopy

“…In particular, laser irradiation is a suitable technique to obtain metal oxides complex structures at room temperature in short times and with rather low energy consumption. Contrary to conventional thermal oxidation of metals achieved by furnace annealing, continuous wave laser or pulsed-laser irradiation allows to induce extremely localized surface modifications within well-defined regions, determined by the laser characteristics and physical properties of the material [5,6]. Within this context, nano and micropatterning of different structures like photomasks and diffractive optical elements can be achieved [7,8].…”

AgGeSbTe thin film as a negative heat-mode resist for dry lithography

“…Moreover, high density (the duty cycle of 1:1), multiscale (the minimum size varying from 90 nm to 2.7 μm), and arbitrary patterns have also been realized [15] . Besides, chalcogenide heat-mode resist also exhibits high etching resistance, and the patterns can be transferred onto various substrates, including silicon [11,16] , fused silica glass [12,17] , GaAs [18] , etc. These researches have greatly promoted the development of laser lithography.…”

Tunable plasmonic resonances in Si-Au slanted columnar heterostructure thin films

“…Alternative approaches seek ordered arrangements of nanoparticles thereby creating large fractions of unoccupied volume to reduce light absorption, for example, on surfaces or in thin film form. Different fabrication techniques have been used to create highly uniform periodic three dimensional structures, such as electron beam (e-beam) lithography with phase-shift mask technology 24 , nano-imprint lithography 25 , nanoscale selective area epitaxy 26 , laser direct writing technique 27,28 , and glancing angle deposition (GLAD) 29–31 . GLAD is a physical vapor deposition technique, which utilizes particle flux at oblique angles resulting in bottom-up growth of columnar structures with nanometer dimensions due to competitive nucleation processes, geometrical shadowing, and adatom surface diffusion limitations 29 .…”