Realization of AlGaN/GaN HEMTs on 3C‐SiC/Si(111) substrates

Cordier, Y.; Portail, Marc; Chenot, Sébastien; Tottereau, O.; Zieliński, Marcin; Chassagne, Thierry

doi:10.1002/pssc.200778641

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…So far, it has been reported that a stable 3C-SiC intermediate layer can be introduced in between GaN and Si to suppress the crack generation and enhance the crystal quality of the GaN film on Si substrate [14], [17]- [20]. Owing to the above fact, a thick nitride layer can be grown on Si by introducing a 3C-SiC intermediate layer [14], [20].…”

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Wakejima

Bose

Biswas

et al. 2022

IEICE Trans. Electron.

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A detailed investigation of DC and RF performance of AlGaN/GaN HEMT on 3C-SiC/low resistive silicon (LR-Si) substrate by introducing a thick GaN layer is reported in this paper. The hetero-epitaxial growth is achieved by metal organic chemical vapor deposition (MOCVD) on a commercially prepared 6-inch LR-Si substrate via a 3C-SiC intermediate layer. The reported HEMT exhibited very low RF loss and thermally stable amplifier characteristics with the introduction of a thick GaN layer. The temperature-dependent small-signal and large-signal characteristics verified the effectiveness of the thick GaN layer on LR-Si, especially in reduction of RF loss even at high temperatures. In summary, a high potential of the reported device is confirmed for microwave applications.

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Section: Introductionmentioning

confidence: 99%

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Wakejima

Bose

Biswas

et al. 2022

IEICE Trans. Electron.

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“…Such a material is SiC, firstly employed by Takeuchi and Davis . Later, micrometer thick 3C‐SiC(111) layers were used for the same purpose . Albeit, it was shown that for reliable heteroepitaxial growth and device fabrication thick silicon carbide layers are not necessary .…”

Section: Introductionmentioning

confidence: 99%

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates

Jatal

Baumann

Jacobs

et al. 2017

Phys. Status Solidi A

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The realization of depletion-mode planar and both enhancement-and depletion-mode tri-gate high electron mobility transistors (HEMTs) based on Al 0.2 Ga 0.8 N/AlN/GaN heterostructures grown on silicon substrates using an ultrathin 3C-SiC transition layer is presented. This substrate configuration simplifies heterostructure growth compared to SiC and thick 3C-SiC substrates. The threshold voltage of the tri-gate devices strongly depends on the AlGaN/GaN body (fin) width. A transition from depletion-mode to enhancement-mode operation occurred at 110 nm body width for tri-gate devices without Si 3 N 4 passivation, and is expected to occur at 75 nm for devices with Si 3 N 4 passivation. Threshold voltages of À0.25/ 0.35 V were achieved at fin widths of 82/100 nm with/without Si 3 N 4 passivation, respectively, for the tri-gate HEMTs in comparison to À3.5 V for the planar HEMTs. Cutoff frequencies f T of 45 GHz and maximum frequencies of oscillation f max of 50 GHz have been measured for our best 100-nm tri-gate enhancement-mode HEMTs, while depletionmode planar HEMTs with the same gate length showed 110 GHz for both f T and f max . This demonstrates the applicability of the developed substrate configuration for high-performance device applications.

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Elaboration of (111) oriented 3C–SiC/Si layers for template application in nitride epitaxy

Zieliński

Portail

Roy

et al. 2009

Materials Science and Engineering: B

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Realization of AlGaN/GaN HEMTs on 3C‐SiC/Si(111) substrates

Cited by 9 publications

References 16 publications

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates

Elaboration of (111) oriented 3C–SiC/Si layers for template application in nitride epitaxy

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