Realising wide bandgap P-SiC-emitter lateral heterojunction bipolar transistors with low collector–emitter offset voltage and high current gain: a novel proposal using numerical simulation

Abstract

The authors report a novel method to reduce the collector-emitter offset voltage of the wide bandgap SiC-P-emitter lateral HBTs using a dual-bandgap emitter. In their approach, the collector-emitter offset voltage V CE(offset) is reduced drastically by eliminating the built-in potential difference between the emitter-base (EB) and collector-base (CB) junctions by using a SiC-on-Si P-emitter. It is demonstrated that the proposed dual-bandgap P-emitter HBT, together with the SiGe base and Schottky collector, not only has a very low V CE(offset) but also exhibits high current gain, reduced Kirk effect, excellent transient response and high cutoff frequency. The performance of the proposed device is evaluated in detail using two-dimensional device simulation, and a possible BiCMOS compatible fabrication procedure is also suggested.

Influence of external mechanical stress on electrical properties of single-crystal n-3C-SiC/p-Si heterojunction diode

“…9,10) The SiC=Si heterojunction has been explored broadly as a promising candidate for various semiconductor device applications including high-frequency and high-voltage diodes, photovoltaic cells, and heterojunction bipolar transistors. [11][12][13][14][15] Further, 3C-SiC is a promising material for combination with Si because of its large band gap, good physical stability, and large electron mobility for high-temperature and highpower electronic devices. 16,17) The facility of readily growing 3C-SiC on large-diameter Si substrates gives it advantages over its counterpart materials.…”