Real-time thermal monitoring of power semiconductors in power electronics using linear parameter-varying models for variable coolant flow situations

Warwel, Manuel; Wittler, Gerd; Hirsch, Michele; Reuss, Hans-Christian

doi:10.1109/compel.2014.6877142

Cited by 20 publications

(6 citation statements)

References 7 publications

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“…Representing a power device generating high temperature, two commercial SMD type resistors are used as a heat source (each size: 6.4mm × 3.2mm × 0.5mm). The total size of the two resistors is identical with the dimension of real IGBT devices [19,21].…”

Section: A Fabrication Of the Simplied Power Modulementioning

confidence: 99%

“…Temperature elevation increases the resistor value, and sequentially changes current passing through the resistors. Also, the resistor can detect wire bond lift-off [19] or unbalanced device currents [20,21]. This method provides in-situ and real-time measurements with minor modifications in module design.…”

Section: Introductionmentioning

confidence: 99%

“…1.a): Adequate power dissipations are applied to each power device, generating the maximum temperature of 150°C, which is generally observed in conventional silicon power devices [21,24].…”

mentioning

confidence: 99%

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Novel built-in sensor for in-situ monitoring of temperature and thermal stress in power modules

Kim

Yoon

2015

2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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This paper presents a novel piezoelectric sensor, which is integrated in power modules and analyzes temperature and thermal-mechanical stress in real time. Due to the increased power density, recent power modules are often exposed to high operating temperatures. Thus, it is critical to measure temperature and (related) thermal stress in power modules. The piezoelectric sensor proposed herein is fabricated by attaching PZT pieces on a direct bonded copper (DBC) substrate. Heat from operating power devices deflects power substrates and generates thermal stress, which is picked up by in-built piezoelectric sensors optimally located at critical locations. As the sensor locations are away from heatgenerating power devices, their effects on device performance are negligible. Both simulation and experiment results demonstrate that the proposed sensor provides a very good linearity (R 2 = ~0.99) in the temperature range from 40°C to 160°C. This sensor characteristics were consistent in different measurements. Therefore, our in-built piezoelectric thermal sensor facilities reliable in-situ monitoring of temperature distribution and thermal stress in power modules experiencing high temperatures.

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Section: A Fabrication Of the Simplied Power Modulementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Novel built-in sensor for in-situ monitoring of temperature and thermal stress in power modules

Kim

Yoon

2015

2015 IEEE Energy Conversion Congress and Exposition (ECCE)

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“…In addition, in the process of analyzing the lifetime of the IGBT in rail transportation areas, the low cycle junction temperature fluctuations caused by the acceleration, idling, and deceleration speed conditions between each station lead to a relatively large calculation of the number of cycles analyzed by the RFCM. In order to study the internal stress action mechanism of IGBT modules in converter systems, the use of finite element simulation is an accepted method [18,19]. Ref.…”

Section: Introductionmentioning

confidence: 99%

A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation

Wang

Zhou

Dongye

et al. 2023

Sensors

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In the actual operation of urban rail vehicles, it is essential to evaluate the condition of the traction converter IGBT modules. Considering the fixed line and the similarity of operation conditions between adjacent stations, this paper proposes an efficient and accurate simplified simulation method to evaluate IGBT conditions based on operating interval segmentation (OIS). Firstly, this paper proposes the framework for a condition evaluation method by segmenting operating intervals based on the similarity of average power loss between neighboring stations. The framework makes it possible to reduce the number of simulations to shorten the simulation time while ensuring the state trend estimation accuracy. Secondly, this paper proposes a basic interval segmentation model that uses the operating conditions as inputs to implement the segmentation of the line and is able to simplify the operation conditions of entire line. Finally, the simulation and analysis of the temperature and stress fields of IGBT modules based on segmented intervals completes the IGBT module condition evaluation and realizes the combination of lifetime calculation with actual operating conditions and internal stresses. The validity of the method is verified by comparing the interval segmentation simulation with actual test results. The results show that the method can effectively characterize the temperature and stress trends of traction converter IGBT modules in the whole line, which could support the fatigue mechanism and lifetime assessment reliability study of IGBT modules.

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“…The finite element analysis is to solve the constraint relationship between physical formulas, then decompose a realistic three-dimensional model into small units, and solve the solution of each unit to solve the solution of the whole model [20]. The literature confirms that finite element analysis can accurately reflect the heat and thermal stress generated in the operation of IGBT devices, also can help us to understand the relationship between these parameters [21], [22]. However, it is often difficult to obtain actual IGBT operating parameters, and the extraction of physical parameters requires a large amount of financial and material resources [23].…”

Section: Introductionmentioning

confidence: 99%

Electro-Thermal-Mechanical Multiphysics Coupling Failure Analysis Based on Improved IGBT Dynamic Model

Zhou

et al. 2019

IEEE Access

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Failure of the power device can have a very large impact on the entire power circuit. IGBT as the main power device, ensuring its reliability becomes more and more important. In different environments, there will be large differences in the failure rate of IGBTs. Therefore, studying the failure mechanism of IGBT is of great significance to ensure the reliability of IGBT. Firstly, the IGBT dynamic model is constructed and the model is improved to correct the power consumption error. Then the IGBT finite element model is used to analyze the electro-thermal-force of different material layers, at the same time, the distribution of stress and temperature between different materials are analyzed. Finally, the JavaScript script is used to generate random defects of the solder layer, and the effects of different defects of the solder layer on the weakest part of the IGBT are studied, including voids, cracks, and solder layer falling off. The results of the analysis show that after the IGBT defects reach a certain level, the solder layer voids, the solder layer fall off, and the solder layer cracks have a great influence on the IGBT junction temperature and stress. Among them, shedding and cracks have a greater influence on the stress of the solder layer. INDEX TERMS IGBT, dynamic model, electro-thermal-mechanical, three-dimensional finite element.

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Real-time thermal monitoring of power semiconductors in power electronics using linear parameter-varying models for variable coolant flow situations

Cited by 20 publications

References 7 publications

Novel built-in sensor for in-situ monitoring of temperature and thermal stress in power modules

Novel built-in sensor for in-situ monitoring of temperature and thermal stress in power modules

A Condition Evaluation Simplified Method for Traction Converter Power Module Based on Operating Interval Segmentation

Electro-Thermal-Mechanical Multiphysics Coupling Failure Analysis Based on Improved IGBT Dynamic Model

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