Real-time monitoring of contact behavior of RF MEMS switches with a very low power CMOS capacitive sensor interface

Fruehling, Adam; Khater, Mohammad Abu; Jung, Byunghoo; Peroulis, Dimitrios

doi:10.1109/memsys.2010.5442291

Cited by 9 publications

(6 citation statements)

References 4 publications

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“…These devices are single crystal silicon RF MEMS switches previously reported in [19], with gold to gold contact. A Polytec Microsystems Analyzer (MSA) 400 LDV was used to measure the response of the beams to various step voltage inputs.…”

Section: Methodsmentioning

confidence: 99%

Multiple Timescales and Modeling of Dynamic Bounce Phenomena in RF MEMS Switches

Tung

Fruehling

Peroulis

et al. 2014

J. Microelectromech. Syst.

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Electrostatically operated RF-MEMS switches are known to suffer from discrete switch bounce events during switch closure that increase wear and tear and lead to increased switching times. Here, we use laser Doppler vibrometer to analyze the switch response of three types of cantilevered dc-contact switches at a 200 ns time resolution. We find that bounce events are multiple time scale events with distinct motion occurring at 10 −1 and 10 1 s timescales in effect high frequency bounces within a bounce. To understand the origin of this effect, we develop a multiple eigenmode model of a cantilever switch with electrostatics, repulsive and adhesive contact forces, and rarefied gas damping and find that the high frequency bounce arises from the transient excitation of the 2nd eigenmode of the cantilever structure of the RF-MEMS switch. This phenomenon not only describes the multiple time scales involved in bounce events, but also shows that the transient excitation of the second mode leads to complex drum roll like dynamics, leading to a series of closely spaced impacts in each actuation cycle. A careful study of the dependence of the phenomenon on contact stiffness and adhesion shows how the landing pad stiffness, adhesion, and actuation voltage in dc contact switches can increase or diminish repeated impacts during actuation.[ 2012-0228]Index Terms-RF MEMS, switch bounce, laser Doppler vibrometer (LDV), switch wear.

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Section: Methodsmentioning

confidence: 99%

Multiple Timescales and Modeling of Dynamic Bounce Phenomena in RF MEMS Switches

Tung

Fruehling

Peroulis

et al. 2014

J. Microelectromech. Syst.

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“…This sensing method shows great potential to develop a high-G digital accelerometer with high redundancy with low noise and response times. Further research will need to be conducted to understand the contact bouncing phenomena by adopting measurement techniques developed by Fruehling et al [10].…”

Section: Discussionmentioning

confidence: 99%

Arrays of silicon cantilevers for detecting high-G rapidly varying acceleration profiles

et al. 2010

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This work presents the first experimental study on the effectiveness of single-crystal silicon (SCS) cantilever arrays as contact-based high-G sensors in digital MEMS accelerometers. Unlike conventional designs, a digital scheme is employed where detection of a specific acceleration level is associated with a group of silicon cantilevers, which deflect and make solid-to-solid silicon contacts with the substrate. This scheme is especially useful in applications where a high-G rapidly changing acceleration profile needs to be detected with a high confidence level. The proposed designs have been successfully demonstrated up to 45,000 g, which is commonly found in impact and pyroshock phenomena, such as in multistage rocket launches and earth penetrating weapons. The arrays of beams offer high redundancy in the measured data, which is critical when used in events with severe consequences. The fabricated devices were tested using a modified Kolksy bar setup and found to have contact resistances in the order of ∼3.2±3 kΩ. Depending on the applied acceleration profile, contact bouncing is observed during testing.

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“…A labeled SEM of device design B, which was utilized for modeling [14] is shown in figure 3. All switches are fabricated in a manner similar to that described in [13] which has been modified to facilitate dicing to an 800 μm × 800 μm die size for packaging. The fabrication process is briefly summarized as follows.…”

Section: Rf Mems Switchmentioning

confidence: 99%

“…As a result, none of the existing methodologies can be utilized to record an RF MEMS switch dynamic behavior in real time after the switch has been integrated into its final system. The authors recently proposed a new technique based on ultra-low-power IC CMOS sensor interfaces and presented proof-of-concept experiments [12,13] showing RF MEMS switches being monitored in real time. This paper significantly extends the authors previous work by providing (1) explicit independent experimental validation of the data collected by the IC sensor interface; (2) detailed assessment of the impact of parasitics on the height and timing accuracy of the presented technique; and (3) experimental evidence of the ability to record nanobounces for the presented RF MEMS switches for the first time.…”

Section: Introductionmentioning

confidence: 99%

In situ monitoring of dynamic bounce phenomena in RF MEMS switches

Fruehling

Tung

Raman

et al. 2013

J. Micromech. Microeng.

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This paper presents the first ultra-low-power complementary metal–oxide–semiconductor (CMOS)-based measurement technique for monitoring the cold-switched dynamic behavior of ohmic radiofrequency microelectromechanical systems (RF MEMS) switches in real time. The circuit is capable of providing precise information about contact timing and ohmic contact events. Sampling of dynamic events at frequencies of 1 and 5 MHz shows contact timing accuracy of 99% when compared with real-time true-height information obtained from laser Doppler vibration data. The technique is validated for an ohmic RF MEMS switch with multiple bounces. The actuation voltage has also been designed to enhance bouncing behavior to more clearly study the performance and limits of the presented technique. More than 13 bounces are successfully captured by the electronic measurement technique. The weakest bounces exhibit vertical displacements of less than 20 nm as recorded by a laser Doppler vibrometer. This demonstrates the ability to capture precise timing information even for weak contacting events. A detailed discussion of how parasitics influence this technique is also presented for the first time.

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Real-time monitoring of contact behavior of RF MEMS switches with a very low power CMOS capacitive sensor interface

Cited by 9 publications

References 4 publications

Multiple Timescales and Modeling of Dynamic Bounce Phenomena in RF MEMS Switches

Multiple Timescales and Modeling of Dynamic Bounce Phenomena in RF MEMS Switches

Arrays of silicon cantilevers for detecting high-G rapidly varying acceleration profiles

In situ monitoring of dynamic bounce phenomena in RF MEMS switches

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