Real Time Estimation and Control of Oxide-Etch Rate Distribution Using Plasma Emission Distribution Measurements

Abstract

We have investigated the transient electroluminescence (EL) onset of the double-layer light-emitting devices made from poly(N-vinylcarbozole) (PVK) doped with 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris(8-hydroxy-quinoline) aluminium (Alq 3 ). For the double-layered device in which PVK was doped with 0.1 wt% DCJTB, the EL onset of PVK lags that of DCJTB and Alq 3 , while the EL onset of DCJTB and Alq 3 is simultaneous. However, the EL emission of the double-layered device of PVK/Alq 3 originates only from Alq 3 . The results show that DCJTB dopants can not only help to tunnel electrons from Alq 3 zone to PVK but can also assist electrons transfer in PVK under high electric field by hopping between DCJTB molecules or from DCJTB to PVK sites at a low doping concentration of 0.1 wt%. When the DCJTB doping concentration is 4.0 wt%, the EL onset of Alq 3 lags that of DCJTB. The difference in the EL onsets of DCJTB, Alq 3 and PVK is attributed to the slow build-up of the internal space charge in the vicinity of the interface between PVK and Alq 3 . The electron potential difference of the interface between Alq 3 and PVK doped by DCJTB can be adjusted by changing the DCJTB doping concentration in double-layer devices.

Behavior of Dust Particles in Plasma Etching Apparatus

“…Thus it can be deduced that the change of the etching rate distribution roughly represents the change of the plasma density distribution. 15) When the plasma density was increased at the wafer center, no trapped particles were detected. When the etching rate distribution was uniform, particles began to float above the wafer and some of them were exhausted by the gas flow within a several seconds.…”

Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide

“…The plasma distribution was controlled by a magnetic field generated by the coils around the reactor. 25,26) The samples were etched on the blanket silicon wafer in the reactor at a pressure of 6.0 Pa under HBr=N 2 =fluorocarbon-based gas plasma generated with a source power of 1000 W. The energy of the ions incident onto the sample was controlled by applying a RF bias power of 1200 W. The temperature of the sample (set on an electrostatic chuck stage) was maintained between 20 and 80 °C by using a circulator system.…”

Role of surface-reaction layer in HBr/fluorocarbon-based plasma with nitrogen addition formed by high-aspect-ratio etching of polycrystalline silicon and SiO2 stacks

“…Chamber wall sputtering and plasma diffusion can be suppressed by a 200 MHz discharge effect. 20,21) Figure 2 shows a schematic of the reactor. The gas inlet under the upper electrode in the reactor was made of a dielectric material that can withstand a corrosive gas.…”