2011
DOI: 10.1143/jjap.50.08je01
|View full text |Cite
|
Sign up to set email alerts
|

Behavior of Dust Particles in Plasma Etching Apparatus

Abstract: The behavior of dust particles in a plasma etching apparatus was investigated with an in-situ particle monitor. The properties of the particles are classified into three types according to the particle velocity. Slow-velocity particles (less than 1 m/s) are trapped by a plasma-sheath boundary and rarely fall on the wafer during plasma discharge. These particles should be removed from the region above the wafer before turning off the plasma. Increasing gas flow rate and changing plasma density distribution are … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2015
2015
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(2 citation statements)
references
References 17 publications
(33 reference statements)
0
2
0
Order By: Relevance
“…[11,12]. Controlling the presence of these solid particles can be of technological importance in various low temperature plasma applications, such as plasma etching [13] or nanoparticle synthesis in plasma [14][15][16]. In many cases (for example the plasmas in fusion devices and astrophysical systems), the plasma is subjected to strong magnetic fields (B 1 T).…”
Section: Introductionmentioning
confidence: 99%
“…[11,12]. Controlling the presence of these solid particles can be of technological importance in various low temperature plasma applications, such as plasma etching [13] or nanoparticle synthesis in plasma [14][15][16]. In many cases (for example the plasmas in fusion devices and astrophysical systems), the plasma is subjected to strong magnetic fields (B 1 T).…”
Section: Introductionmentioning
confidence: 99%
“…So the arguments in the ref. 6 (dust particle collision from the fast running blades of the TMP. Slightly blurred fashion of the polymer deposition profile may be an evidence of the ref.…”
Section: Cf X Polymer Depositionmentioning
confidence: 99%