Real‐time diagnostics for metalorganic vapor phase epitaxy

Abstract

Metalorganic vapor phase epitaxy is a complicated process whereby constituents of incoming reactant species are incorporated into the growing crystal through a number of stages. A range of optical probes has been developed to provide detailed information about these stages and the sample as growth proceeds. While many of these probes are mature, spectroscopic ellipsometry (SE) and polarimetry (SP) are both undergoing rapid improvements as a result of applications in integrated-circuits technology. Here, I review some of these advances and the motivation behind them, and illustrate capabilities with an application regarding the heteroepitaxial growth of GaSb on GaAs.

In situspectroscopic ellipsometry as a versatile tool for studying atomic layer deposition

“…The sensitivity of SE is, in principle, sufficient to detect changes in the nominal thickness of surface layers equivalent to 0.01 monolayer [7,9]. The technique is therefore commonly applied in situ to study film growth by physical and chemical vapour deposition techniques as reviewed by several authors [10][11][12][13][14][15].…”

Spectroscopic ellipsometry and polarimetry for materials and systems analysis at the nanometer scale: state-of-the-art, potential, and perspectives

“…As an example, the use of SE in real-time diagnostics for metalorganic vapor phase epitaxy of III–V materials has been reviewed by Aspnes ( 2005 ). The application of real-time SE to elucidate Si-based thin film deposition processes in a reactive environment, like plasma enhanced chemical vapor deposition (PECVD), and to identify phase transitions from amorphous to nanocrystalline and microcrystalline growth regimes and control Si-based film nanostructures has been well established by Collins et al ( 2003 ).…”