Real-time and on-chip surface temperature sensing of GaN LED chips using PbSe quantum dots

Abstract

PbSe quantum dots (QDs) were employed as real-time and on-chip temperature sensors to monitor the surface temperature of GaN LED chips. The temperature-dependent photoluminescence spectra were achieved and confirmed to be a good method for surface temperature sensing in a micro- to nano-region. The nanosized QD sensors did not influence the LED emission spectrum due to their infrared emission and little absorption. The surface temperature of GaN LED chips was analyzed at different working times and voltages. The temperature sensitivity characterized by the photoluminescence peak position of PbSe QDs was found to be 0.15 nm °C(-1) in a range of 30-120 °C and the precision was determined to be ± 3 °C. The QD surface temperature sensors were confirmed to have good reversibility and repeatability.

Near-infrared light emitting diodes using PbSe quantum dots

“…25,27,35 According to the previous reports, with the increasing particle sizes of PbSe QDs, the initially positive temperature coefficient of peak energy becomes zero, and then negative. Red-shi and blue-shi of LEDs were observed for the three LEDs respectively when increasing the voltage.…”

Liquid-type AgInS2/ZnS quantum dot-based warm white light-emitting diodes

“…But the solid-type device (blue hollow circle) has more obvious change with the injection current increase compared with the liquid-type device (red hollow circle). It is attributed to the thermal quenching of AIS/ZnS QDs induced by the increased temperature of LED chip surface at higher driving current for traditional solid-type WLED, which leads to the decline of PL QY of AIS/ZnS QDs [38][39][40]. Nevertheless, the influence of thermal effect was lesser for the liquid-type WLED.…”

Theoretical Research on Ellipsoidal Structure Methane Gas Detection Based on Near Infrared Light Sources of PbSe Quantum Dots

“…As a result, PbSe QDs show very strong quantum confinement and high quantum yield in NIR region. Their band edge photoluminescence peaks span over a wide infrared wavelength region of 1−4 m [25][26][27][28][29]. The wavelength can be adjusted merely by changing the particle size to 2 Journal of Nanomaterials cover the particular absorption frequencies of many kinds of gases in the NIR region.…”