Reactivity and stability of thallium oxide for fabricating TlSnZnO toward thin-film transistors with high mobility

Effective Thallium(I) Removal by Nanocellulose Bioadsorbent Prepared by Nitro-Oxidation of Sorghum Stalks

“…Its crystallinity index (CI) was found to be about 43.5%, which was estimated from WAXD profile by Equation (S1) (Supporting Information). In contrast, the WAXD profile of NOCNF-TL floc exhibited several more distinct diffraction peaks at 30, 35, 50 and 58°, which can be assigned to the (222), (400), (440) and (541) lattice planes of thallium(III) oxide (Tl 2 O 3 ) crystal structure [ 55 , 56 ]. The presence of Tl 2 O 3 in the floc sample indicated that Tl(I) ions were successfully absorbed on the NOCNF surface, which were subsequently converted to Tl(III) when reacted with molecular oxygen and formed insoluble Tl 2 O 3 crystal.…”

Extensive removal of thallium by graphene oxide functionalized with aza-crown ether

“…As the XPS of Tl 4f, two peaks were observed in Fig. 8e, which are generally dened as spin orbit splitting: 4f 7/2 and 4f 5/2 , and the spin-orbit splitting is 4.4 eV, 56 and the double peaks of Tl 2 O were observed at 118.4 eV and 122.82 eV, with a distance between them of 4.42 eV. 57 The peak areas of carbon and oxygen did not change signicantly (Fig.…”

Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors

“…[31][32][33] Recent studies have shown that solution process can be uniformly and quantitatively doped at the molecular level to solve these issues. [34][35][36] Our previous study suggested tungsten (W) ions plays a leading role in changing the performance of the ZTO lm and the stability of the TFT thanks to the W element as an oxygen vacancies suppressor.…”