Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors

Yuan, Yanyu; Peng, Cong; Yang, Shibo; Xu, Meng; Feng, Jiayu; Zhang, Jianhua

doi:10.1039/d0ra05245k

Cited by 5 publications

(3 citation statements)

References 46 publications

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“…So far, there have been many studies focusing on employing solution methods for specific layers of TFT, especially the active layer or the gate dielectric layer. [ 4–6 ] Although there have been a few attempts on fabricating full‐solution functional layers for oxide TFTs, the devices demonstrate poor performance with mobility ( μ ), typically μ < 10 cm 2 V –1 s –1 , which is too poor to satisfy the industry criteria of driving backplate. [ 7–10 ] On the other hand, most previous reports in solution‐processed TFTs are focused on the nonpatterned single TFT from spin coating, which have rather large channel length (>50 μm) through the thermal evaporation that it is not suitable for the application in high‐resolution active‐matrix displays.…”

Section: Introductionmentioning

confidence: 99%

“…So far, there have been many studies focusing on employing solution methods for specific layers of TFT, especially the active layer or the gate dielectric layer. [4][5][6] Although there have been a few attempts on fabricating full-solution functional layers for oxide TFTs, the devices demonstrate poor performance with mobility (µ), typically µ < 10 cm 2 V -1 s -1 , which complete the realization of patterned full-solution-processed oxide TFT array that all of these depend on the postprocessing method of the USDLA technique. This approach significantly realizes the full-solution-processed ITO/HAO/WZTO TFT array with high quality and high yield by the precise control of laser peak temperature and scanning path.…”

Section: Introductionmentioning

confidence: 99%

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High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

Peng

et al. 2022

Adv Materials Inter

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On the other hand, most previous reports in solutionprocessed TFTs are focused on the nonpatterned single TFT from spin coating, which have rather large channel length (>50 µm) through the thermal evaporation that it is not suitable for the application in high-resolution active-matrix displays. [11,12] Therefore, in order to make TFT more practical for the application, the full-solution-processed TFT arrays with channel lengths of less than 10 µm must be fabricated by the photolithographic-patterned technique. Furthermore, it is also noted that solution-processed TFTs have typical disadvantages of high temperature (>400 °C), long time and high cost, [13][14][15] the alternative approach to fabricate full-solution-processed TFT array is the fast and energy-efficient postprocessing method of the ultrafast scanning diode laser annealing (USDLA), which provide a viable solution for commercialization, especially for displays and circuits.Meanwhile, the TFT devices directly expose to the atmospheric environment, the ambient water (H 2 O) and oxygen (O 2 ) that diffuse into the active layer can accelerate degradation of the device stability. [16,17] Usually, a passivation layer is used to isolate the device from the external environment to achieve the effect of blocking H 2 O and O 2 , thereby improving the stability of the device. And the silicon oxide thin films are widely used for passivation material because of its advantages, such as wide band gap, low leakage current density, and high industrial compatibility. [18][19][20][21][22] In addition, TFTs are inevitably exposed to light environment (from ambient light, the backlight of liquid crystal display panels, or self-illumination of active-matrix organic light-emitting diode), the light sensitivity of oxide TFTs should be minimized to ensure the application in practical displays. [23,24] Especially for the full-solution-processed oxide TFT remains suffering from severe bias-stress instability. [20,23,25] So, it is necessary to improve the stability under bias illumination stress for the full-solution-processed oxide TFT.Accordingly, on the basis of our previous studies for the tungsten-zinc-tin-oxide (WZTO) active layer, [26] the indium-tin-oxide (ITO) electrodes and the hafnium-aluminum-oxide (HAO) gate dielectric layers are further investigated comprehensively to The full-solution-processed oxide thin-film transistor (TFT) array is successfully realized by using ultrafast scanning diode laser annealing (USDLA). It integrates all solution-processed functional thin films well, including low-electrical-resistivity transparent conductive indium-tin-oxide (ITO) thin film, high-k dielectric hafnium-aluminum-oxide (HAO) thin film, and high-quality semiconductor tungsten-zinc-tin-oxide (WZTO) thin film. And the stacked multilayer thin films as a whole exhibit a smooth surface with the root mean square (RMS) roughness of 0.293 nm. The full-solution-processed TFT array exhibits a uniform overall TFT device performance, the average values including subthreshold swing of 11...

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

Peng

et al. 2022

Adv Materials Inter

Self Cite

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“…Ultrasound is characterized as any sound wave in frequencies above the normal hearing range of the human ear (i.e., above 16 kHz) [14] and the field of application of ultrasonic waves is surprisingly vast, such as in the pharmaceutical and food industries [15] , [16] , [17] , [18] , [19] , [20] , extraction processes [16] , [21] , [22] , [23] , [24] , [25] , [26] , [27] , [28] , [29] , [30] , [31] , waste treatment [32] , [33] , [34] , [35] , [36] , [37] , [38] , [39] , [40] , [41] , [42] , [43] , [44] , [45] , [46] , materials chemistry [47] , [48] , [49] , analytical chemistry [50] , [51] , [52] , [53] , and nanoparticle synthesis [24] , [41] , [54] , [55] , [56] , [57] , [58] , [59] . All these examples, addressing the application of ultrasound for different purposes, serve as consolidating pillars for the importance of this tool for the progress of science and technology.…”

Section: Introductionmentioning

confidence: 99%

Greener organic synthetic methods: Sonochemistry and heterogeneous catalysis promoted multicomponent reactions

Machado

Santos

Januario

et al. 2021

Ultrasonics Sonochemistry

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Performance enhancement of solution-processed amorphous WZTO TFT with HAO gate dielectric via power ultrasound technology

Yuan

Peng

et al. 2023

Displays

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Rapid and facile method to prepare oxide precursor solution by using sonochemistry technology for WZTO thin film transistors

Abstract: In this paper, a rapid and facile method of preparing metal-oxide semiconductor precursor solution using sonochemistry technology is proposed.

Cited by 5 publications

References 46 publications

High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

Greener organic synthetic methods: Sonochemistry and heterogeneous catalysis promoted multicomponent reactions

Performance enhancement of solution-processed amorphous WZTO TFT with HAO gate dielectric via power ultrasound technology

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