Reactive sintering process and thermoelectric properties of boron rich boron carbides

Roszeitis, Sven; Feng, Bing; Martin, Hans-Peter; Michaelis, Alexander

doi:10.1016/j.jeurceramsoc.2013.08.013

Cited by 34 publications

(25 citation statements)

References 22 publications

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“…The addition of tantalum carbide/boride results in an increase in the electrical conductivity in comparison to pure boron carbide what has an electrical conductivity between 1 and 2 S/cm 1 at room temperature and around 20 S/cm 1 at 800°C. 7 At room temperature the conductivity increases with increasing amount of tantalum boride. The tantalum boride is a metallic like conductor and the boron carbide is a semiconductor.…”

Section: Electrical Conductivitymentioning

confidence: 99%

“…1 The combination of extraordinary high stiffness (E = 450 GPa) and low specific weight (2.52 g/cm 3 ) produces an outstanding stiffness/weight ratio compared to all other constructional material types. [4][5][6] A moderate electrical (1 S/ cm) and thermal (15 W/mK) conductivity can be modified in a wide range by shifting the ratio of boron and carbon amount (B 10 C…B 4 C) 7 or by the manufacture of composites. [1][2][3][4] Moreover electrical, thermal, or thermoelectric relevant properties are unique among other ceramic materials.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] Moreover electrical, thermal, or thermoelectric relevant properties are unique among other ceramic materials. [4][5][6] A moderate electrical (1 S/ cm) and thermal (15 W/mK) conductivity can be modified in a wide range by shifting the ratio of boron and carbon amount (B 10 C…B 4 C) 7 or by the manufacture of composites. 8,9 The Seebeck-Coefficient which quantifies the thermoelectric power can reach a level >300 µV/K so that boron carbide can be used for temperature sensor or even thermoelectric generator applications as well.…”

Section: Introductionmentioning

confidence: 99%

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Pressureless sintering and properties of boron carbide composite materials

Martin

Feng

Michaelis

2019

Int J Applied Ceramic Tech

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Boron carbide and Tantalum boride composites were prepared by pressureless sintering of B 4 C with addition of TaC powder. The effect of TaC addition on the sinterability of boron carbide was studied. High densified ceramic with a relative density of 98.7% was obtained at sintering temperature of 2250°C. The composition and the microstructure of the dense composites are characterized by means of x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive x-ray spectroscopy (EDX). The studies show that the composites contain boron carbide, TaB 2 , and carbon phases with a homogeneous structure. In addition, the correlation between the composition and the electrical conductivity was investigated. The electrical conductivity of the composite increased with increasing addition of TaC, and a change in conduction behavior from semiconducting to metallic was observed.High hardness value of 28.49 ± 1.33 GPa was obtained by the sample with 30 wt% TaC addition. K E Y W O R D S boron carbide, electrical conductivity, pressureless sintering, tantalum boride How to cite this article: Martin H-P, Feng B, Michaelis A. Pressureless sintering and properties of boron carbide composite materials. Int J Appl Ceram Technol.

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Section: Electrical Conductivitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Pressureless sintering and properties of boron carbide composite materials

Martin

Feng

Michaelis

2019

Int J Applied Ceramic Tech

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“…These properties make it suitable for numerous applications from wear resistant components and cutting tools to high temperature thermocouples and neutron absorbers [1][2][3][4][5]. Boron carbide can also be used as a precursor or reduction agent to produce boron nitride and transition-metal diborides (TiB 2 , ZrB 2 , HfB 2 , and CrB 2 ) [6][7][8][9][10] and recently has been applied in gamma ray scintillator and neutron detectors and as high efficiency thermoelectric material [11,12].…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Nanocrystalline Boron Carbide by Direct Microwave Carbothermal Reduction of Boric Acid

Gunnewiek

Souto

Kiminami

2017

Journal of Nanomaterials

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The excellent physical and chemical properties of boron carbide make it suitable for many applications. However, its synthesis requires a large amount of energy and is time-consuming. Microwave carbothermal reduction is a fast technique for producing well crystallized equiaxial boron carbide nanoparticles of about 50 nm and very few amounts of elongated nanoparticles were also synthesized. They presented an average length of 82 nm and a high aspect ratio (5.5). The total reaction time was only 20 minutes, which disfavor the growing process, leading to the synthesis of nanoparticles. Microwave-assisted synthesis leaded to producing boron-rich boron carbide. Increasing the forward power increases the boron content and enhances the efficiency of the reaction, resulting in better crystallized boron carbide.

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“…B 4 C with its appropriate chemical stability and electrochemical resistance is expected to find applications in the design of fuel cells as a catalytic support . The thermoelectric properties make B 4 C highly effective material as a direct convertor of thermal into electrical energy . The unusual high Seebeck coefficient of B 4 C (250 μV/K at 200 K) determines its use as a p‐type thermoelectric in special high‐temperature devices and in thermal neutrons detecting devices .…”

Section: Introductionmentioning

confidence: 99%

Synthesis of Boron Carbide by Reactive‐Pulsed Electric Current Sintering in the Presence of Tungsten Boride

Radev

Avramova

Kovacheva

et al. 2016

Int J Applied Ceramic Tech

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The method of pulsed electric current sintering (PECS) has been used to obtain dense boron carbide (B4C) and B4C‐based composite materials containing tungsten boride (W2B5). To elucidate the role of the sintering additives and the mechanism of reactive densification, three types of materials have been obtained by PECS at 1850°C and 1900°C: “pure” B4C, B4C doped with 10 wt% W2B5, and B4C doped with 10 wt% tungsten carbide (WC). X‐ray diffraction and X‐ray photoelectron spectroscopy have been used to determine crystallite size, phase changes, and the peculiarities of the chemical bonds of the densified materials. Structural and mechanical properties of the materials have been investigated using scanning electron microscopy, optical microscopy, ultrasound velocity measurements, and hardness tests. The electrochemical impedance spectra have been used to investigate the electrical properties of the PECS‐ed materials.

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Reactive sintering process and thermoelectric properties of boron rich boron carbides

Cited by 34 publications

References 22 publications

Pressureless sintering and properties of boron carbide composite materials

Pressureless sintering and properties of boron carbide composite materials

Synthesis of Nanocrystalline Boron Carbide by Direct Microwave Carbothermal Reduction of Boric Acid

Synthesis of Boron Carbide by Reactive‐Pulsed Electric Current Sintering in the Presence of Tungsten Boride

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