Reactive phase formation in sputter-deposited Ni/Al multilayer thin films

Barmak, K.; Michaelsen, C.; Lucadamo, G.

doi:10.1557/jmr.1997.0021

Cited by 116 publications

(64 citation statements)

References 31 publications

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“…2. Similar two-step crystallization, first via lateral nucleation followed by thickening, could be found in several thin film silicide and aluminide forming systems [29][30][31][32][33][34][35] . For T ≥ 622 °C, a second phase transition takes place.…”

Section: A Controlling Pinhole Density With Choice Of Barrier Layersupporting

confidence: 66%

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Dey

Yu²,

Consiglio³

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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RC-time delay in Cu interconnects is becoming a significant factor requiring further performance improvements in future nanoelectronic devices. Choice of alternate interconnect materials, as for example, refractory metals, and subsequent integration with underlying barrier and liner layers are extremely challenging for the sub-10 nm nodes. The development of conformal deposition processes for alternate interconnects, liner, and barrier materials are crucial in order for implementation of a possible replacement for Cu interconnects for narrow line widths. In this study we report on ultra-thin (~ 3nm) chemical 2 vapor deposition (CVD) grown ruthenium films on 0.5 and 1 nm thick metal nitride (TiN, TaN) barrier layers deposited via atomic layer deposition (ALD). Using scanning electron microscopy, we determined the effect of the underlying barrier layer on the coverage of the ruthenium overlayer. We utilized synchrotron x-ray diffraction with in-situ rapid thermal annealing to investigate the thermal stability of the barrier layers and determine the effective activation energies of barrier failure leading to ruthenium monosilicide formation.For Ru films deposited directly on Si and on 0.5 nm MN (M=Ti, Ta) covered Si substrates, silicide formation proceeds via a two-step crystallization process involving lateral nucleation above ~ 440 °C followed by thickening of the ruthenium monosilicide layer above ~520 °C. This silicidation temperature of ~ 440 °C could be potentially problematic in back-end-of-the-line (BEOL) processing since it is close to the typical thermal budget used. However ~1 nm thick ALD MN (M=Ti, Ta) was found to be adequate to block silicide formation up to ~ 580 °C and ~ 620 °C for TiN and TaN, respectively, and also aided in superior coverage of the CVD ruthenium overlayer (>90%). The results reported here might be useful to ascertain annealing temperature and time for BEOL process and integration optimization without reaching a state where ruthenium silicides start forming.

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Section: A Controlling Pinhole Density With Choice Of Barrier Layersupporting

confidence: 66%

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Dey

Yu²,

Consiglio³

et al. 2017

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…When a small but concentrated pulse of energy such as an electric spark or a thermal pulse is provided, highly exothermic, self-propagating chemical reactions can be triggered that proceed very quickly. The Ni-Al multilayer is often used as model system and as such it has been widely investigated systems both in experiment [1][2][3][4][5] and in continuum studies [6][7][8][9][10][11][12][13][14][15][16]. Recently, these multilayers have received increased attention because of their potential application as controllable, localized heat sources for joining microelectronic components without damage and as useful tools for forming near-net shape intermetallics [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Interdiffusion of Ni-Al multilayers: A continuum and molecular dynamics study

Falk

Weihs

2013

Journal of Applied Physics

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Molecular dynamics simulation of Al/Ni multilayered foils reveals a range of different reaction pathways depending on the temperature of the reaction. At the highest temperatures Fickian interdiffusion dominates the intermixing process. At intermediate temperatures Ni dissolution into the Al liquid becomes the dominant mechanism for intermixing prior to formation of the B2 intermetallic phase. At lower temperatures the B2 intermetallic forms early in the reaction process precluding both of these mechanisms. Interdiffusion and dissolution activation energies as well as diffusion prefactors are extracted from the simulations.

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“…[11][12][13][14][15] . Nanocalorimetry makes it possible to conduct such studies on extremely small samples over a very wide range of heating rates [15][16][17][18][19][20] .…”

Section: Introductionmentioning

confidence: 99%

Scanning AC nanocalorimetry study of Zr/B reactive multilayers

Lee

Sim

Xiao

et al. 2013

Journal of Applied Physics

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The reaction of Zr/B multilayers with a 50 nm modulation period has been studied using scanning AC nanocalorimetry at a heating rate of approximately 10 3 K/s. We describe a data reduction algorithm to determine the rate of heat released from the multilayer. Two different exothermic peaks are identified in the nanocalorimetry signal: a shallow peak at low temperature (200 -650°C) and a sharp peak at elevated temperature (650 -800°C). TEM observation shows that the first peak corresponds to heterogeneous inter-diffusion and amorphization of Zr and B, while the second peak is due to the crystallization of the amorphous Zr/B alloy to form ZrB 2 .

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Reactive phase formation in sputter-deposited Ni/Al multilayer thin films

Cited by 116 publications

References 31 publications

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Atomic layer deposited ultrathin metal nitride barrier layers for ruthenium interconnect applications

Interdiffusion of Ni-Al multilayers: A continuum and molecular dynamics study

Scanning AC nanocalorimetry study of Zr/B reactive multilayers

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