Reactive ion sputter depth profiling of tantalum oxides: A comparative study using ToF‐SIMS and laser‐SNMS

Abstract

A time-of-flight (ToF) sputter depth profile analysis of standard 15 or 30 nm thick anodically formed Ta,O, layers as well as of the naturally grown -2 nm thin oxide overlayer on metallic tantalum samples has heen made using both the techniques of (positive and negative) secondary ion mass spectrometry (SIMS) and laser secondary neutral mass spectrometry (LaserSNMS). Specific emphasis of this comparative study is on the characterization of the performance of a state-of-the-art ToF mass spectrometer with respect to sputter depth profiling. The prospects of SIMS and Laser-SNMS for quantitative near-surface analysis are addressed under special consideration of reactive (Cs' or Ga+) ion beam sputtering applied in the present work.

Influence of argon pressure on the depth resolution during GDOES depth profiling analysis of thin films

“…In SIMS depth profiling analysis, anodic oxide films on tantalum have been used as calibration standards for depth resolution because the films, unlike anodic alumina films, are sufficiently conducting that ion beam bombardment-induced surface charging is insignificant. For a thin anodic oxide film ¾15 nm thick on tantalum, which is less than 1/20 of the thickness of the present case, a υW value of 2 nm has been reported by Franzreb et al 11 An AFM image obtained from the initial, as-anodized surface is shown in Fig. 5(a).…”

Characterization of titanium hydride films covered by nanoscale evaporated Au layers: ToF-SIMS, XPS and AES depth profile analysis

“…The ToF-SIMS measurements were performed using a commercial ToF-SIMS mass spectrometer 11,12 from PHIEvans equipped with a pulsed Ga C liquid-metal ion gun. High mass resolution mode (15 kV Ga C ) was used in order to make a better separation between isotopes of Ti and TiH.…”

Influence of interfacial depth on depth resolution during GDOES depth profiling analysis of thin alumina films

“…3,9,10 By convention, the depth resolution, z, is defined as the measured sputtered depth over which a signal intensity of a probe element increases from 16% to 84% (or decreases from 84% to 16%) of its maximum value when profiling through a sharply defined interface between two media. 3,11 For reasons of good signal-to-noise ratio, the depth resolution is assessed from the sharp transition of the aluminium profile at the oxide/metal interface.…”