Influence of argon pressure on the depth resolution during GDOES depth profiling analysis of thin films

Shimizu, K.; Habazaki, H.; Skeldon, P.; Thompson, G.E.; Wood, G. C.

doi:10.1002/(sici)1096-9918(200002)29:2<155::aid-sia729>3.0.co;2-g

Cited by 12 publications

(8 citation statements)

References 10 publications

(4 reference statements)

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“…Increase or decrease of Ar pressure from the optimum generally results in rapid degradation of depth resolution, with the production of convex (round-bottomed) or concave (deep-sided) craters. 15 In practice, an optimum Ar pressure can be found readily and quickly by checking the sharpness of the transition of the profiles of relevant elements at appropriate interfaces with Ar pressure. The search is greatly assisted by the speed of analysis.…”

Section: The Origin Of High Depth Resolution In Rf Gdoes Depth Profmentioning

confidence: 99%

Radiofrequency GDOES: a powerful technique for depth profiling analysis of thin films

Shimizu

Habazaki

Skeldon

et al. 2003

Surface & Interface Analysis

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Previously, glow discharge optical emission spectroscopy (GDOES), both d.c. and r.f. has been used for depth profiling analysis of thick films several tens of microns thick, utilizing its high sputtering rates of >1 µm min −1 . Through selected examples, it is demonstrated here that r.f. GDOES also has enormous potential for depth profiling analysis of ultrathin films <10 nm thick, where AES and SIMS have dominant roles. The significant features of r.f. GDOES enabling such analysis arise from the nature of r.f. glow discharge sputtering where samples, both conducting and non-conducting, are sputtered very stably with Ar + ions of low energies .<50 eV) and high current fluxes (of the order of 100 mA cm −2 ). The low Ar + energy ensures that film sputtering proceeds without significant formation of altered layers, which is a prerequisite for successful depth profiling analysis of ultrathin films at high depth resolution. The high current fluxes allow sputtering to proceed at very high rates of >1 µm min −1 , thereby extending the limit of film thickness for analysis to 100 µm. Thus r.f. GDOES, with its unique ability to accommodate depth profiling analysis of films of a very wide thickness range, is expected to play an important role in the field of practical surface analysis.

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Section: The Origin Of High Depth Resolution In Rf Gdoes Depth Profmentioning

confidence: 99%

Radiofrequency GDOES: a powerful technique for depth profiling analysis of thin films

Shimizu

Habazaki

Skeldon

et al. 2003

Surface & Interface Analysis

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“…The sensitivities for detection of various elements are high 10 and depth resolutions similar to those of AES and SIMS can be achieved. 9,11 Both conducting and nonconducting layers can be analysed, with thickness to several tens of microns. Furthermore, recent work by the present authors has shown that r.f.-GDOES is well suited for depth profiling analysis of films a few nanometres thick.…”

Section: Discussionmentioning

confidence: 99%

“…of 13.56 MHz and a power of 40 W where the highest depth resolution is achieved. 9 The sampling time was 0.01 s and the wavelengths of spectral lines employed for the detection of aluminium and chromium were 396.15 and 425.43 nm, respectively. The area of analysis was 4 mm diameter, with five depth profiles being accommodated readily on each specimen.…”

Section: Introductionmentioning

confidence: 99%

“…The profiles reveal that the signal intensities of aluminium agree to within 3% throughout the analysis of the oxide film; the observed waviness is an artefact arising from an interference effect. 9 As sputtering proceeds and the aluminium/oxide interface is reached, the aluminium signal intensity exhibits a sharp increase over a narrow region equivalent to ¾6 nm wide. After the sharp increase, the signal intensity continues to increase, although at progressively decreasing rates, until a steady value is reached.…”

Section: Introductionmentioning

confidence: 99%

“…By atomic force microscopy (AFM) examination of sputter craters it has been shown that the gradual increase in the aluminium profile is due to differential sputtering and roughening of the exposed aluminium substrate. 9 The time required to sputter through the alumina film is ¾13 s, corresponding to a sputtering rate of ¾28 nm s 1 . Furthermore, the time required to sputter through the film is constant to within 1%.…”

Section: Introductionmentioning

confidence: 99%

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Reproducibility in r.f.‐GDOES depth profiling analysis of thin films

Shimizu

Habazaki

Skeldon

et al. 2001

Surface & Interface Analysis

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The reproducibility in radiofrequency glow discharge optical emission spectroscopy (r.f.-GDOES) depth profiling has been examined using a 360 nm thick anodic alumina film with a chromium-containing delta-function layer. The time required to sputter through the film was constant, to within 1%, whereas the signal intensities of film species agreed to within 3%. This level of reproducibility together with high depth resolution makes the technique ideal for on-site quality control of various surface-enhanced industrial products, embracing electronics and protective surface treatments.

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Glow Discharge Optical Emission Spectroscopy (GD‐OES)

Hoffmann¹,

Quentmeier²

2011

Surface and Thin Film Analysis

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Influence of argon pressure on the depth resolution during GDOES depth profiling analysis of thin films

Cited by 12 publications

References 10 publications

Radiofrequency GDOES: a powerful technique for depth profiling analysis of thin films

Radiofrequency GDOES: a powerful technique for depth profiling analysis of thin films

Reproducibility in r.f.‐GDOES depth profiling analysis of thin films

Glow Discharge Optical Emission Spectroscopy (GD‐OES)

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