2015 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) 2015
DOI: 10.1109/rsm.2015.7354999
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Reactive Ion etching of TiO2 thin film: The impact of different gaseous

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Cited by 5 publications
(3 citation statements)
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“…In our case, etching down to the etch stop layer reduces the roughness to an acceptable level for our investigations and produced relatively smooth surfaces (see Figure 2b) compared to previously published results. 41,42 We note that reactive ion etching processes have been successfully applied in industrial process chains and therefore do not principally impede the scalability of our fabrication method. 43,44…”
Section: Sample Fabrication Schemementioning
confidence: 99%
“…In our case, etching down to the etch stop layer reduces the roughness to an acceptable level for our investigations and produced relatively smooth surfaces (see Figure 2b) compared to previously published results. 41,42 We note that reactive ion etching processes have been successfully applied in industrial process chains and therefore do not principally impede the scalability of our fabrication method. 43,44…”
Section: Sample Fabrication Schemementioning
confidence: 99%
“…TiO2 also offers physical and chemical resistance, which can extend the lifespan of a device. However, inducing a precise etching of TiO2 thin-films to achieve a particular profile, is still a challenging task, especially on the nanoscale [14].…”
Section: Introductionmentioning
confidence: 99%
“…However, this requires high etch selectivity of TiO 2 towards resist. Studies have been performed on the properties of different reactive gasses, such as CF 4 [26][27][28], SF 6 [28,29], Cl 2 [29,30] and BCl 3 [31]. In this work, we compare systematically the influence of SF 6 , CHF 3 , HBr, BCl 3 and Cl 2 as reactive gas and optimize the etching recipe.…”
Section: Introductionmentioning
confidence: 99%