Reactive Ion Etching of Tantalum Pentoxide

Seki, S.; Unagami, Takashi; Tsujiyama, Bunjiro

doi:10.1149/1.2119624

Cited by 17 publications

(17 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The results are very similar to those obtained earlier by Seki et al 2 and it seems like this process meets the requirements for realizing the capacitor structure in Fig. 1.…”

Section: Resultssupporting

confidence: 91%

See 1 more Smart Citation

Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching

Jonsson

Westlinder

Engelmark

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma Patterning of fluorine-, hydrogen-, and carbon-containing SiO 2 -like low dielectric constant materials in highdensity fluorocarbon plasmas: Comparison with SiO 2 Integrated capacitors can easily cover a major part of the total chip area which may seriously affect the cost to produce the chip. By using a high epsilon material as the dielectric material, in the capacitor, the size can be reduced significantly. One very promising candidate is tantalum pentoxide (Ta 2 O 5 ) which has a dielectric constant of about 25. This should be compared to silicon nitride which has a dielectric constant of 8. In order to make integrated capacitors the tantalum pentoxide must be patterned. Results of a study on etching of tantalum pentoxide, silicon dioxide, and polysilicon with a high density plasma, using an inductively coupled plasma source, are presented and compared to results obtained by means of reactive ion etching. The gas used, CHF 3 , implies a polymerizing chemistry and the deposition of a fluorocarbon layer is shown to play an important role in the etch process. The fluorocarbon deposition onto the substrate surface is not only affected by the temperature of the substrate itself but also by the temperature of all surfaces that are exposed to the plasma. The process parameters with the strongest influence on the process have been found to be pressure and substrate bias voltage.

show abstract

“…The results are very similar to those obtained earlier by Seki et al 2 and it seems like this process meets the requirements for realizing the capacitor structure in Fig. 1.…”

Section: Resultssupporting

confidence: 91%

“…Reactive ion etching ͑RIE͒ of tantalum pentoxide has been studied earlier. 2,3 However, available information on the subject is quite limited. Reactive ion etching is also, at present, being phased out and replaced by high density plasma ͑HDP͒ etching processes.…”

Section: Introductionmentioning

confidence: 99%

Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching

Jonsson

Westlinder

Engelmark

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…Peak B apparently has the narrowest width (or FWHM) and the highest intensity in the PL spectra, so it represents the largest number of oxygen vacancies of the intrinsic midgap state. 23,[38][39][40][41][42][43] The broadening of Peaks A, A 0 , B 0 , C and C 0 is caused by variations in the number of types of oxygen vacancies. Fig.…”

Section: Resultsmentioning

confidence: 99%

Enhancement of green-light photoluminescence of Ta2O5 nanoblock stacks

Devan

Lin

Gao

et al. 2011

Phys. Chem. Chem. Phys.

View full text Add to dashboard Cite

In this study we have explored the structural, electronic, and photoluminescence (PL) properties of Ta(2)O(5) nanoblock stacks. The Ta(2)O(5) nanoblocks were synthesized by the hot filament metal-oxide vapor deposition (HFMOVD) technique and randomly arranged in large-area stacks. Field-emission scanning electron microscopy (FESEM) showed most of the stacking Ta(2)O(5) nanoblocks to be 21 nm wide. Energy dispersive spectroscopy (EDS) analysis verified the presence of only the elements Ta and O. X-Ray photoemission spectroscopy (XPS) not only revealed the electronic structures and chemical properties of the stacking Ta(2)O(5) nanoblocks but also their stoichiometric Ta/O ratio of ∼0.416 (i.e. Ta:O = 2.08 : 5). Photoluminescence (PL) spectroscopy showed very strong green-light emissions, which emerged from the trap-levels of the oxygen vacancies within the Ta(2)O(5) bandgap. The PL intensities were linearly enhanced by increasing the laser power and the excitation time. The PL results suggest that the nanoblocks are excellent visible-light emitters.

show abstract

“…[10][11][12] Ta 2 O 5 has also found application as an etch mask during surface or bulk micromachining of Si, 13 as an insulating layer in thin film electroluminescent display devices 14,15 and as a detection layer in sensors. 16 There has been relatively little work on dry etch patterning of Ta 2 O 5 , 17,18 which is the preferred method of forming small structures due to the difficulty in wet etching. 19,20 Previous reports have found relatively slow etch rates for Ta 2 O 5 in fluorocarbon-based 17,18 plasma chemistries such as CF 4 , C 2 F 6 , CHF 3 , and CF 3 Cl.…”

mentioning

confidence: 99%