Enhancement of green-light photoluminescence of Ta2O5 nanoblock stacks

Devan, Rupesh S.; Lin, Ching-Ling; Gao, Shun-Yu; Cheng, Chia‐Liang; Liou, Y.; Ma, Yuan‐Ron

doi:10.1039/c1cp21283d

Cited by 50 publications

(37 citation statements)

References 47 publications

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“…The broad visible light emission band is ascribed to the electron transitions between the deep levels and the valence band89. The deep levels are created by structural defects, impurities, Zn residues, and oxygen vacancies127 within the bandgap, but mainly from the various oxygen vacancies74142. The electron transitions (or PL emissions) from the conduction band, donor states (indicated by brown dashed lines), and deep levels (indicated by deep blue lines) to the valence band for the semiconducting hollow ZnO nanoballoons are schematically illustrated in Fig.…”

Section: Photoluminescence Emission Mechanismsmentioning

confidence: 99%

Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons and metal-semiconductor Zn/ZnO nanospheres

Lin

Patil

Devan

et al. 2014

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We utilized a thermal radiation method to synthesize semiconducting hollow ZnO nanoballoons and metal-semiconductor concentric solid Zn/ZnO nanospheres from metallic solid Zn nanospheres. The chemical properties, crystalline structures, and photoluminescence mechanisms for the metallic solid Zn nanospheres, semiconducting hollow ZnO nanoballoons, and metal-semiconductor concentric solid Zn/ZnO nanospheres are presented. The PL emissions of the metallic Zn solid nanospheres are mainly dependent on the electron transitions between the Fermi level (EF) and the 3d band, while those of the semiconducting hollow ZnO nanoballoons are ascribed to the near band edge (NBE) and deep level electron transitions. The PL emissions of the metal-semiconductor concentric solid Zn/ZnO nanospheres are attributed to the electron transitions across the metal-semiconductor junction, from the EF to the valence and 3d bands, and from the interface states to the valence band. All three nanostructures are excellent room-temperature light emitters.

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Section: Photoluminescence Emission Mechanismsmentioning

confidence: 99%

Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons and metal-semiconductor Zn/ZnO nanospheres

Lin

Patil

Devan

et al. 2014

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“…In this study, we are able to synthesize large-area arrays of vertical-aligned 1D NiO nanorods using the hot-filament metal-oxide vapor deposition (HFMOVD) technique. This technique has become very important, because it can be used to synthesize a variety of metal-oxide101617181920212223242526 and metal27282930 nanostructures with diverse morphological features and crystalline traits. The 1D NiO nanorods thus produced were then characterized by field-emission scanning electron microscopy (FESEM), energy dispersive spectroscopy (EDS), transmission electron microscopy (TEM), x-ray diffractometry (XRD) and ultraviolet-visible spectroscopy.…”

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An efficient methodology for measurement of the average electrical properties of single one-dimensional NiO nanorods

Patil

Devan

Lin

et al. 2013

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We utilized a metal tantalum (Ta) ball-probe to measure the electrical properties of vertical-aligned one-dimensional (1D) nickel-oxide (NiO) nanorods. The 1D NiO nanorods (on average, ~105 nm wide and ~700 nm long) are synthesized using the hot-filament metal-oxide vapor deposition (HFMOVD) technique, and they are cubic phased and have a wide bandgap of 3.68 eV. When the 1D NiO nanorods are arranged in a large-area array in ohmic-contact with the Ta ball-probe, they acted as many parallel resistors. By means of a rigorous calculation, we can easily acquire the average resistance RNR and resistivity ρNR of a single NiO nanorod, which were approximately 3.1 × 1013 Ω and 4.9 × 107 Ω.cm, respectively.

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“…We found that the surfaces of the films are relatively smooth, but we could not observe clear differences between the surfaces. Some trap levels and shallow centres of oxygen vacancies in the bandgap of Ta 2 O 5 corresponding to light emission ranging from green to red wavelengths have been reported [10][11][12]. In addition, light emission ranging from blue to red wavelengths was also observed from Y 2 O 3 [13].…”

Section: O M / R E S U L T S -I N -P H Y S I C Smentioning

confidence: 89%

Fabrication and evaluation of Ta2O5:Y2O3 co-sputtered thin films

et al. 2014

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a b s t r a c tCo-sputtered tantalum (V) oxide and yttrium (III) oxide (Ta 2 O 5 :Y 2 O 3 ) thin films were fabricated using radio-frequency magnetron sputtering for the first time, and their photoluminescence (PL) and X-ray diffraction properties were evaluated. Broad PL spectra from 380 to 800 nm were observed only from films annealed at 700°C. The maximum PL intensities were found around a wavelength of 500 nm regardless of the Y concentrations of the films, and the films annealed at 700°C were primarily amorphous phases. It seems that the broad PL spectra from the Ta 2 O 5 :Y 2 O 3 films originated from oxygen vacancies of Ta 2 O 5 and Y 2 O 3 particles that may be produced in Ta 2 O 5 by co-sputtering.

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Enhancement of green-light photoluminescence of Ta2O5 nanoblock stacks

Cited by 50 publications

References 47 publications

Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons and metal-semiconductor Zn/ZnO nanospheres

Photoluminescence mechanisms of metallic Zn nanospheres, semiconducting ZnO nanoballoons and metal-semiconductor Zn/ZnO nanospheres

An efficient methodology for measurement of the average electrical properties of single one-dimensional NiO nanorods

Fabrication and evaluation of Ta2O5:Y2O3 co-sputtered thin films

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