Reactive Ion Etching of Sputter Deposited Tantalum Oxide and Its Etch Selectivity to Tantalum

Abstract

Reactive ion etching of the sputter deposited tantalum oxide has been studied. Process parameters that affect the etch rate, such as the power, pressure, and temperature, were investigated in a wide range of conditions. Etch selectivities between tantalum and tantalum oxide in various processes have been examined. By exchanging one F atom in the CF4 molecule or one C1 atom in the CF3C1 molecule with one H atom, we can reverse the etch selectivity. Structures of the etched surfaces were characterized with the electron spectroscope for chemical analysis. Comparisons of chemical structures of the etched and unetched surfaces were carried out. Etch mechanisms of different plasma processes have been suggested from these comparisons. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.239.1.231 Downloaded on 2015-06-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.239.1.231 Downloaded on 2015-06-03 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.239.1.231 Downloaded on 2015-06-03 to IP

Tantalum oxide-based compounds as new non-noble cathodes for polymer electrolyte fuel cell

“…10 Fig. 10 (a) correspond to those of Ta 4f 7/2 [21][22][23]. Two peaks were superimposed in the Ta 4f 7/2 spectrum of the Ta-CN.…”

Microstructure and Mechanical Properties of TaN Thin Films Prepared by Reactive Magnetron Sputtering

“…The spectra for these films are composed of two sets of Ta 4f doublets. When considering the split energy by spin orbit coupling of 4f7/2 and 4f5/2 in Ta 4f as 1.9 eV, the high energy side doublet for all of the films shows the binding energy of Ta 4f7/2 to be 26.2 eV and of Ta 4f5/2 close to 28.2 eV, which is close to the chemical state of Ta in Ta2O5 (Ta 4f7/2 = 26.2 eV) [26,33]. Regarding the low energy side doublet, the binding energy of Ta 4f7/2 is around 23.1 eV and of Ta 4f5/2 close to 25.1 eV, which correspond to binding states of Ta in Ta-N system (4f7/2 = 23 eV and 4f5/2 = 25 eV) [34].…”

“…The fraction of Ta2O5 binding state is higher for the 3% N2 as compared to 25% N2 film, which is evident from the intensity of the high-energy side shoulder in the Ta 4f spectra, which increases with a decreasing N2 content in the gas mixture. It looks like the incorporation of residual oxygen in [26,33]. Regarding the low energy side doublet, the binding energy of Ta 4f 7/2 is around 23.1 eV and of Ta 4f 5/2 close to 25.1 eV, which correspond to binding states of Ta in Ta-N system (4f 7/2 = 23 eV and 4f 5/2 = 25 eV) [34].…”

Morphological and electrochemical investigation of RuO2–Ta2O5 oxide films prepared by the Pechini–Adams method

“…5b [32,33]. The most interesting characteristic of this spectrum is that there is almost no interference in the shape of the Ta 4f 7/2 core level peaks with the Ti-base.…”