1984
DOI: 10.1116/1.582857
|View full text |Cite
|
Sign up to set email alerts
|

Reactive ion etching of GaAs using BCl3

Abstract: The reactive ion etching of GaAs has been investigated in BCl 3 plasma discharges. Etching rates have been characterized as functions of pressure (10-25 mTorr), power density (~O.05-O.5W / cm 2 l, and C1 2 IBC1 3 gas compositions. Rates of -12-20 nm/min have been obtained, and are significantly lower than for other chlorinated plasmas. Etching profiles exhibit a high degree of anisotropy and smooth surface morphologies.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
24
0

Year Published

1988
1988
2017
2017

Publication Types

Select...
5
3

Relationship

0
8

Authors

Journals

citations
Cited by 31 publications
(24 citation statements)
references
References 0 publications
0
24
0
Order By: Relevance
“…The prominent bands near 357.1 and 351.6 nm exhibit appropriate isotope shifts indicating assignments as electronic origins. The isotope shifts are calculated using eqs [1][2][3][4][5]17 where µ is the reduced mass of 11 B 35 Cl (8.373167 u) and µ i is the reduced mass of the other isotope: 10 B 35 Cl (7.784059 u), 10 B 37 Cl (7.878808 u), or 11 B 37 Cl (8.482900 u).…”
Section: Resultsmentioning
confidence: 99%
“…The prominent bands near 357.1 and 351.6 nm exhibit appropriate isotope shifts indicating assignments as electronic origins. The isotope shifts are calculated using eqs [1][2][3][4][5]17 where µ is the reduced mass of 11 B 35 Cl (8.373167 u) and µ i is the reduced mass of the other isotope: 10 B 35 Cl (7.784059 u), 10 B 37 Cl (7.878808 u), or 11 B 37 Cl (8.482900 u).…”
Section: Resultsmentioning
confidence: 99%
“…2f and 2g). Indeed, Cl 2 guarantees an efficient chemical etching of GaAs, whilst BCl 3 provides a good sidewall surface inhibition and Ar spattering removes the products of the reaction from the bottom of the holes, keeping the etching process active and homogenous [10,11,12]. At the end of the dry etching the residual resist is removed by a wet etching in hot anisole.…”
Section: Phc Cavity Fabricationmentioning
confidence: 99%
“…29,30 The presence of these unoccupied molecular orbitals helps explain the observed negative ion states of the BCl 3 molecule, and consequently the observed or calculated structure in the electron scattering and electron attachment cross sections. A detailed calculation by Baeck and Bartlett 29 -optimizing bond lengths and bond angles within D 3h symmetry for BCl 3 and C 3v symmetry for BCl 3 Ϫ -provided a number of structural and electronic parameters such as ionization energies, electronic vertical excitation energies, and vibrational frequencies for the BCl 3 , BCl 3 Ϫ , BCl 3 ϩ species. 29 A number of experimental studies contribute to an understanding of the molecular and electronic structure of the BCl 3 molecule.…”
Section: Structural and Electronic Propertiesmentioning
confidence: 99%
“…1-7͒. BCl 3 is used in a variety of gas mixtures ͑i.e., BCl 3 mixed with Ar, N 2 , Cl 2 , SF 6 , CF 4 , CHF 3 , ArϩO 2 , ArϩCl 2 , ArϩCCl 2 F 2 , ArϩSF 6 , ArϩH 2 ϩN 2 , SiCl 4 ϩH 2 , and ArϩCl 2 ϩN 2 ) for the etching of GaAs, GaSb, GaN, GaP, InAs, InP, AlGaAs, AlGaP, AlGaN, AlInAs, AlInP, InGaAs, InGaP, InAlP, InAlN, NiMnSb, and InGaAsP ͑e.g., see Refs. 7-13͒.…”
Section: Introductionmentioning
confidence: 99%