Reactive ion beam etching of ferroelectric materials using an RF inductively coupled ion beam source

Williams, K.; Hayes, A.; Distefano, S.; Huang, Owen; Ostan, E.

doi:10.1109/isaf.1996.598141

Cited by 5 publications

(2 citation statements)

References 2 publications

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“…Etch rates of 300-400 Å min −1 in conventional RIE and up to 1500 Å min −1 in high-density inductively coupled plasma (ICP) have been reported. PZT has been demonstrated to etch in fluorine chemistry by reactive ion beam etching (RIBE) in an RF inductively coupled ion source system with C 2 F 6 + Ar feed gases [15]. This work however, was carried out with ion energies higher than achievable in conventional RIE systems and a possible etch mechanism was attributed to the enhanced sputter yield of the fluoride etch products under high ion energy conditions.…”

Section: Plasma Etching Of Pztmentioning

confidence: 99%

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Beeby

Blackburn

White

1999

J. Micromech. Microeng.

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Thick-film printed lead zirconate titanate (PZT) structures can be combined with micromachined silicon structures and offer relatively large actuation forces compared to alternative techniques. This paper describes the initial investigation into the compatibility issues of micromachining silicon wafers with PZT layers printed on the surface. It assesses the effect of many standard photolithography and micromachining upon the printed PZT layer. In particular the adhesion of the printed layer to the substrate and its internal structure have been studied after exposure to each process. Standard photolithography using positive resists has been found to destroy the adhesion of the platinum electrode and an alternative masking technique using a thick-film printed dielectric polymer has been developed. Aluminium top electrodes have been fabricated using this masking technique combined with ion beam milling. Finally many standard micromachining etching processes have been carried out on a range of silicon substrates incorporating platinum electrode/thick-film PZT structures. Wet silicon and silicon dioxide etches were found to be unsuitable since they also attacked the adhesion of the bottom electrode. Plasma etching processes appear to be well suited for the combination of materials since there is a wide range of etches available that do not affect the PZT. These can therefore be used for the micromachining of the silicon substrate after thick-film processing greatly expanding the range of applications suited to this combination of technologies.

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Section: Plasma Etching Of Pztmentioning

confidence: 99%

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Beeby

Blackburn

White

1999

J. Micromech. Microeng.

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“…Reactive Ion Beam Etching (RIBE) in a dual frequency ECR/RF reactor [36][37][38] allows much lower working pressure than the RIE/ICP process (1 to 10 mPa compared to 1-10 Pa). The risk of material redeposition is reduced and the verticality of the sidewalls is improved thanks to the directionality of the bombarding ion beam.…”

Section: Dry Etching Of Pzt Thin Filmsmentioning

confidence: 99%

Microfabrication of Piezoelectric MEMS

Baborowski

2004

Integrated Ferroelectrics

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In this chapter an overview of processes for fabrication of MEMS using piezoelectric thin films as active layer in planar structures is presented. These structures are used in cantilever-like and membrane configurations for sensing and actuation. Key issues consist in findings of a compatible dry etching sequence for piezoelectric layer, electrodes and silicon. The method of compensation of the gradient of mechanical stresses in the thin films in order to obtain flat multilayer structures is demonstrated. Membrane thickness definition and liberation are obtained by DRIE of silicon on insulator (SOI) substrates or by surface micromachining. The platinum bottom electrode turned out to be a useful mask for deep silicon etching of narrow grooves. The complete process has successfully been used to fabricate flat cantilevers, ultrasonic transducers and pressure sensors. Excellent permittivity and transverse piezoelectric coefficient of PZT and AlN have been obtained with complete devices. Several examples of piezoelectric devices (ultrasonic transducers, acoustic sensor, damping control, RF switches) presented in this paper have been developed during the last years. It has been demonstrated that the microfabrication of piezoelectric MEMS based on PZT or AlN thin films is the versatile and reliable technology. Most of the developments are based on PZT sol-gel textured films, however some efforts have been done for integration of AlN for piezoelectric MEMS. In this context, the advantage of AlN is the low thermal budget processing and the possibility of post-CMOS above-IC integration. Other examples of application like ferroelectric memories, nanopatterning and local growth of PZT are presented as well.326 Electroceramic-Based MEMS: Fabrication-Technology and Applications

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Patterning PZT Thin Films using Reactive Ion Beam Etching for PiezoMEMS, RF MEMS Resonator and Filter Applications

James

Pilloux

2019

2019 Symposium on Design, Test, Integration &Amp; Packaging of MEMS and MOEMS (DTIP)

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Reactive ion beam etching of ferroelectric materials using an RF inductively coupled ion beam source

Cited by 5 publications

References 2 publications

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Microfabrication of Piezoelectric MEMS

Patterning PZT Thin Films using Reactive Ion Beam Etching for PiezoMEMS, RF MEMS Resonator and Filter Applications

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