Reactive Dedoping of Polymer Semiconductors To Boost Self-Powered Schottky Diode Performances

Abstract

A facile and strategic junction tuning technology is reported to boost self-powered organic Schottky photodiode (OPD) performances by synergetic contributions of reactive dedoping effects. It is shown that dedoping poly­(3-hexylthiophene-2,5-diyl) (P3HT) films with 1-propylamine (PA) solution significantly reduces not only acceptor-defect density but also intrinsic doping level, leading to dramatically enlarged depletion width of metal/polymer Schottky junctions, as confirmed by ultraviolet photoelectron spectroscopy and Mott–Schottky junction analyses. As a result, whole penetration regions of photons corresponding to absorption bands of P3HT can be fully covered by the depletion region of Schottky junctions, even without the assistance of external electric fields. In addition, it is shown that non-solvent exposure effects of PA dedoping further enable lower paracrystalline disorder and, thus, higher charge carrier mobility, by means of grazing incidence X-ray diffraction, field-effect mobility, and space-charge-limited current analyses. As a result of such synergetic advantages of the PA dedoping method, non-power-driven green-selective OPDs were demonstrated with a high specific detectivity exceeding 6 × 1012 Jones and a low noise-equivalent power of 5.05 × 10–14 W Hz–0.5. Together with a fast temporal response of 26.9 μs and a wide linear dynamic range of 201 dB, the possibility of realizing non-power-driven, near-ideal optimization of solution-processed OPDs with a facile dedoping method is demonstrated.

A Molecular‐Switch‐Embedded Organic Photodiode for Capturing Images against Strong Backlight

“…DOI: 10.1002/adma.202200526 photo diodes. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] However, they exhibit relatively early saturation of their photocurrent when the incident light intensity increases, resulting in the inability to detect objects against strong backlights, such as sunlight (10 −1 to 10 0 W cm −2 ). Except for OPDs comprising specific combinations of donor and acceptor materials, [15][16][17] most OPDs show photocurrent saturation at light intensities ranging from 10 −3 to 10 −2 W cm −2 , which is at least two orders of magnitude lower than those for conventional Si photodiodes.…”

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“…An ultrafast response speed is found, with a rise time of merely 7 µs and a fall time of 115 µs, which offers obvious advantages compared to recent reports (see in Table ). The ultrafast response speed probably comes from the Schottky photodiode structure and the high carrier mobility of single‐crystal STO . Although the rectification effects seem similar in Schottky and p–n junction, the current generation process are different.…”

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“…where I light and I dark are the photocurrent and dark current, respectively. J light is the photocurrent density under a light intensity of 1 mW/cm 2 and J dark is the dark current density [41,42]. where Ilight and Idark are the photocurrent and dark current, respectively.…”

“…where Ilight and Idark are the photocurrent and dark current, respectively. Jlight is the photocurrent density under a light intensity of 1 mW/cm 2 and Jdark is the dark current density [41,42]. Figure 4a Figure 5a shows the pattern of QDs film with a large area of 10 × 10 cm 2 deposited by spray coating.…”