Reactions at amorphous SiC/Ni interfaces

Edelstein, A. S.; Gillespie, D. J.; Cheng, Zhangyu; Perepezko, John H.; Landry, K.

doi:10.1063/1.369580

Cited by 17 publications

(11 citation statements)

References 22 publications

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“…Other works on the structural characterization of the interfacial reaction of Ni with amorphous SiC also reported the first signs of reaction at around 300°C. 71,72 As can be deduced from the aforementioned literature data, there is no good agreement on the onset temperature for reaction between Ni and SiC, on the sequence of phase formation and on the redistribution of carbon in the reacted layer. The first quantitative electrical data on the specific contact resistance of nickel silicide ohmic contacts to n-type SiC were reported by Crofton et al 14 who measured values of /V<5xl0" 6 Qcm 2 , in Ni 2 Si contacts formed by rapid annealing in vacuum at 950°C.…”

Section: Ti-and Ta-based Ohmic Contactsmentioning

confidence: 77%

Ohmic Contacts To

Roccaforte¹,

Via²,

Raineri³

2006

Sic Materials and Devices

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In this chapter, the most significant results obtained in the last decade in the field of ohmic contacts to SiC are reviewed. First, the basic concepts related to the physics of ohmic contacts and to the contact resistance measurement techniques are briefly reported. Then, some aspects concerning the formation of low resistance (10~5-10~6 £2cm 2 ) ohmic contacts on n-type and for p-type SiC are discussed, focusing on Ni-based and Al/Tibased contacts. Examples of innovative applications on practical devices are also reported, as the simultaneous formation of ohmic contacts on n-and p-type SiC for vertical power MOS devices, obtained adding Al to a standard Ni contact, and a single-metal technology for ohmic and rectifying contacts in MESFETs, using Ti or Ni without post-deposition annealing.

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Section: Ti-and Ta-based Ohmic Contactsmentioning

confidence: 77%

Ohmic Contacts To

Roccaforte¹,

Via²,

Raineri³

2006

Sic Materials and Devices

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“…We present here an experimental study of Ni/SiC multilayers for X-ray mirror applications in the range 2 -8 keV. Previous results reported on Ni/SiC interfaces have been mainly motivated by electronic applications [17][18][19]. From these studies, we can presume that silicide formation will take place at Ni/SiC interfaces.…”

Section: Introductionmentioning

confidence: 92%

X-ray broadband Ni/SiC multilayers: improvement with W barrier layers

Emprin¹,

Troussel²,

Soullié³

et al. 2014

Opt. Express

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We present an experimental study and performance improvement of periodic and aperiodic Ni/SiC multilayer coatings. Periodic Ni/SiC multilayer mirrors have been coated and characterized by grazing incidence X-ray reflectometry at 8.048 keV (Cu Kα radiation) and by measurements at 3 keV and 5 keV on synchrotron radiation facilities. An interdiffusion effect is found between Ni and SiC layers. A two-material model, Ni(x)Si(y)/SiC, using a silicide instead of Ni, was used to fit the measurements. The addition of 0.6 nm W barrier layers at the interfaces allows a significant reduction of the interdiffusion between Ni and SiC. In order to obtain a specific reflectivity profile in the 2 - 8 keV energy range, we have designed and coated aperiodic multilayer mirrors by using Ni/SiC with and without W barrier layers. The experimental reflectivity profiles as a function of the photon energy were measured on a synchrotron radiation facility in both cases. Adding W barrier layers in Ni/SiC multilayers provides a better precision on the layer thicknesses and a very good agreement between the experimental data and the targeted spectral profile.

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“…According to the tabulated XRD spectra data of nickel silicides (JCPDS files), the NiSi, Ni 3 Si, and Ni 2 Si phases exhibit the diffraction peak at 2θ Ϸ 44.6°. Edelstein et al 11 observed the transformation of NiSi to Ni 2 Si in the Ni/a-SiC multilayer samples at 600°C. However, at 350°C, the formation Gibbs free energies of nickel silicides are Ϫ62.5 kJ/g-atom mole for Ni 3 Si, Ϫ63.3 kJ/g-atom mole for Ni 5 Si 2 , Ϫ63.7 kJ/g-atom mole for Ni 2 Si, Ϫ62.4 kJ/g-atom mole for Ni 3 Si 2 , Ϫ57.9 kJ/g-atom mole for NiSi, and Ϫ48.2 kJ/g-atom mole for NiSi 2 .…”

Section: Analysis Of Phase Selectionmentioning

confidence: 97%

“…In a study of Ni/a-Si multilayers, Wang et al 10 found Ni to be the mobile species, implying that this behavior would occur in a Ni/amorphous(a)-SiC as well, i.e., Ni would diffuse faster into SiC than the released Si diffuses into polycrystalline Ni. Recently, Edelstein et al 11 observed NiSi to form prior to Ni 2 Si in Ni/a-SiC multilayered samples.…”

Section: Introductionmentioning

confidence: 97%

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Interface reaction between Ni and amorphous SiC

Kim

Perepezko

Dong

et al. 2004

Journal of Elec Materi

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A Ni/amorphous SiC (a-SiC) multilayered sample was prepared by ion-beam sputtering and was used as a model system to study the stability of metal contacts with a-SiC against interface reactions. The diffusion of Ni into the a-SiC layer as well as Si and C into the Ni layer takes place concurrently during the annealing process. An intermediate NiSi phase was identified in the Ni solution layer because of diffusion of Si and C resulting from the decomposition of a-SiC. A phase selection diagram has been developed that accounts for nucleation of the NiSi phase from the Ni solution layer.

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Reactions at amorphous SiC/Ni interfaces

Cited by 17 publications

References 22 publications

Ohmic Contacts To

Ohmic Contacts To

X-ray broadband Ni/SiC multilayers: improvement with W barrier layers

Interface reaction between Ni and amorphous SiC

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