Reactions and diffusion of atomic and molecular oxygen in theSiO2network

Abstract

To address the reactions and diffusion of atomic and molecular oxygen in SiO 2 , the modification of the SiO 2 network on exposure to an atomic or molecular oxygen atmosphere is investigated by measuring the x-raydiffraction profile of the residual order peak emanating from the oxide. Analyses of the peak intensity and its fringe pattern provide experimental evidence for the recent theoretical predictions, indicating that atomic oxygen is incorporated into the SiO 2 network near the surface and diffuses toward the interface along with modifying it even at a low temperature of 400°C, whereas molecular oxygen diffuses without reacting with the bulk SiO 2 even at a temperature of 850°C that is sufficiently high for oxidation reaction at the interface.

Effect of microwave plasma treatment on silicon dioxide films grown by atomic layer deposition at low temperature

“…Oxygen atoms in a plasma have been reported to react with the SiO 2 network near the surface and diffuse toward the interface by changing bond connections. 11,21 In the O 2 /He plasma, high-energy He ions would assist oxygen atoms in changing the bonding and reconstructing the SiO 2 network by breaking bonds with impurities. Figure 4 shows the correlation between the Si-H and E 0 center concentrations.…”

“…[8][9][10] Plasma treatments generate a high density of excited oxygen atoms, which react with the SiO 2 network at temperatures typically too low for oxygen molecules reaction. 11 In previous reports, it was concluded that the SiO 2 network was reconstructed by SPA plasma treatments, which led to a reduced leakage current. To investigate which active species in the SPA plasma are most effective in improving the oxide film characteristics, we have treated ALD oxide films with various plasmas and investigated the dependence of the physical and electrical characteristics on the type of inert gas, O 2 partial pressure (P O2 ), and total plasma pressure.…”

Diffusion and reactions of interstitial oxygen species in amorphous SiO2: A review

“…(8)) [74]. Furthermore, a recent X-ray diffraction study has shown that the migration of interstitial O 0 is accompanied by a significant rearrangement of the Si-O network, which is not caused by the diffusion of interstitial O 2 [91]. Thus, interstitial O 0 probably forms POL in the Si-O network.…”

Microfabrication, separations, and detection by mass spectrometry on ultrathin-layer chromatography plates prepared via the low-pressure chemical vapor deposition of silicon nitride onto carbon nanotube templates

“…There have been many studies on the diffusion/transport of atomic and molecular oxygen, as well as other species like CO, through silica and related materials. Tatsumura et al reported that atomic and molecular oxygen diffuse in silica at temperatures as low as 400 and 850 • C, respectively [37]. Roy et aldiscussed the oxidation of silicon carbide in oxygen at around 1000 • C [38].…”