Reaction of sputtered Pt films on GaAs

Thin film reactions on alloy semiconductor substrates

“…These relative intensities are consistent with a preference for the (111) orientation for deposited Pt, which has been previously reported for Pt/GaAs [KM75].…”

“…This has been shown in the case of Pt/GaAs, where PtAs 2 forms with a strong orientation relationship on the GaAs, while Pt-Ga phases form on the surface [SI73, KM75,F083]. To a lesser extent, the same situation develops in the Pt/lnP system, where…”

“…There is experimental evidence which supports this approach. Even when Pt/GaAs thin films are annealed over a range of temperatures (300-600 o C), the layered PtGa/PtAs2/GaAs structure is maintained [KM75,SA87b]. This suggests that the impetus for PtAs 2 segregation at the interface is somewhat insensitive to temperature ..…”

Thermal reaction of Pt film with 〈110〉 GaN epilayer

“…35 Previous to the crystallization of GaPt 3 , which is epitaxially matched to the Pt phase, a solidstate amorphization reaction is observed. 36 GaPt 3 has a diffraction pattern almost identical to that of Pt except for a few very weak lines, 35 and it is the first binary compound in the phase diagram that equilibrates with the Pt-Ga solid solution by addition of Ga. Hence, it is quite possible that some GaPt 3 forms initially in our samples too, but that it remains undetected by x-ray diffraction, before Ga 2 Pt starts to form.…”

Phase Formation in the Pt/Inp Thin Film System

“…Pt begins reacting with the GaAs substrate at _250°C [11], with an intermediate phase distribution of Pt, Pt3Ga , PtAs2, and GaAs [12]. After ar, nealing at higher temperatures (>400°C, 10-20 minutes), the phase distribution is P_Ga, PtAs2, and GaAs [11][12][13].…”