Reaction Mechanisms in Laser-Assisted Chemical Vapor Deposition of Microstructures

Tonneau, D.; Pauleau, Y.

doi:10.1007/978-94-010-0353-7_10

Cited by 3 publications

(4 citation statements)

References 36 publications

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“…In order to start the redox reactions above and produce an ion current through the device, an external potential is necessary. The shift in the potential of the electrodes due to the external bias or 'overpotential' for Ag electrode reaction is less than 10 mV and for Cu it is only a few tens of mV [99].…”

Section: Electrode Charge Transfermentioning

confidence: 96%

“…α is the charge transfer coefficient which ranges from 0 to 1; α<0.5 indicates that the fraction of the electrostatic potential affecting the oxidation rate is larger than the fraction affecting reduction at the electrode and α>0.5 indicates the opposite [100]. J 0 is the exchange current density, which is difficult to predict as it depends greatly on the nature of the electrode, including its surface roughness and the presence of incidental layers such as oxides and absorbed species, but it is generally higher for materials with low overpotential [99]. The value of J 0 for Ag is in the ) for the charge transfer process which leads to an exponential increase in ion current density with applied voltage above 50-100 mV (depending on the value of α).…”

Section: Electrode Charge Transfermentioning

confidence: 99%

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Conductive bridging random access memory—materials, devices and applications

Kozicki¹,

Barnaby²

2016

Semicond. Sci. Technol.

101

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We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given-a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

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Section: Electrode Charge Transfermentioning

confidence: 96%

Section: Electrode Charge Transfermentioning

confidence: 99%

Conductive bridging random access memory—materials, devices and applications

Kozicki¹,

Barnaby²

2016

Semicond. Sci. Technol.

101

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“… a Sulfonate groups have a p K a < 1; however, p K a increases to 5.6, when adsorbed on a polycation due to electrostatic interactions between anion−anion groups …”

Section: Resultsmentioning

confidence: 99%

pH-Controlled Assembly and Properties of LbL Membranes from Branched Conjugated Poly(alkoxythiophene sulfonate) and Various Polycations

et al. 2009

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We report on multilayer layer-by-layer (LbL) films of the conjugated polymer sodium poly[2-(3-thienyl)ethyloxy-4-butylsulfonate] (PTH) assembled with polycations: poly(diallyldimethylammonium chloride) (PDDA), 20% quaternized poly(N-ethyl-4-vinylpyridinium bromide) (Q20), poly(ethylene imine) (PEI), and poly(allylamine hydrochloride) (PAH). These films were prepared through spin-assisted LbL assembly under various pH conditions. We demonstrated a crucial role of the deposition pH in formation of PTH/polycation films and showed that decrease in the deposition pH from 7.5 to 2.5 limits the PTH multilayer formation to Q20/PTH and PDDA/PTH films due to reduced charge density in the poly(thiophene) chains. We show that optical and surface properties of the resulting PTH/polycation films can be tuned by varying a polycation component and/or by varying the deposition pH. The fluorescence properties of the Q20/PTH, PEI/PTH, and PDDA/PTH films are pH-dependent, and the films exhibit the drastic changes in photoluminescent intensity when transferred into solutions with different pH values, which may find useful in optical sensing applications.

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“…with ├CH 3 and ├OH being the methyl and hydroxyl groups absorbed at the Al 2 O 3 interface. Such a reaction can be described by Eley-Rideal kinetics (13). The rate equation is then given by…”

Section: Kinetic Modelmentioning

confidence: 99%

(Invited) Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation

Poodt

Lankhorst²,

Roozeboom

et al. 2010

ECS Trans.

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An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, with which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high throughput ALD deposition tool is being developed towards throughputs of up to 3000 wafers/hr.

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Reaction Mechanisms in Laser-Assisted Chemical Vapor Deposition of Microstructures

Cited by 3 publications

References 36 publications

Conductive bridging random access memory—materials, devices and applications

Conductive bridging random access memory—materials, devices and applications

pH-Controlled Assembly and Properties of LbL Membranes from Branched Conjugated Poly(alkoxythiophene sulfonate) and Various Polycations

(Invited) Ultrafast Atomic Layer Deposition of Alumina Layers for Solar Cell Passivation

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