1990
DOI: 10.1016/0040-6090(90)90221-x
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Reaction kinetics of the formation of indium tin oxide films grown by spray pyrolysis

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Cited by 71 publications
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“…Various techniques have been used to deposit the ITO thin films, and studies have been concentrated on how to obtain the excellent properties of the thin films, especially in the effect of the processing related parameters of the grown oxidation films and the incorporation of Sn [4,5]. ITO thin films can be prepared by various techniques [2,[6][7][8][9], such as chemical vapor deposition (CVD), thermal evaporation deposition, direct current (dc), and radio frequency (r.f.)…”
Section: Introductionmentioning
confidence: 99%
“…Various techniques have been used to deposit the ITO thin films, and studies have been concentrated on how to obtain the excellent properties of the thin films, especially in the effect of the processing related parameters of the grown oxidation films and the incorporation of Sn [4,5]. ITO thin films can be prepared by various techniques [2,[6][7][8][9], such as chemical vapor deposition (CVD), thermal evaporation deposition, direct current (dc), and radio frequency (r.f.)…”
Section: Introductionmentioning
confidence: 99%
“…To effectively take advantage of ambient processing, nonvacuum approaches for electrode fabrication are highly desirable [8,9]. Much progress has been achieved in recent years on producing ITO electrodes from solution [10][11][12]. These films, however, often result in higher resistivities and lower performance [13].…”
Section: Introductionmentioning
confidence: 99%
“…They also play an important role in the general performance of opto-electronic devices [3]. Various techniques have been used to deposit the ITO films, and studies have concentrated on how to obtain the excellent properties of the films, especially on the effect of the processing related parameters of the grown oxidation films and the incorporation of Sn [4][5][6]. In this study, chromium was chosen as the dopant, since indium (In 3+ ) is substituted by chromium in the ITO (In 2 O 3 ) matrix, one electron will be released from the films to contribute to their electrical conductivity.…”
Section: Introductionmentioning
confidence: 99%