RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades

Barbero, M.; Fougeron, D.; Godiot, S.; Menouni, M.; Pangaud, P.; Rozanov, A.; Breugnon, P.; Bomben, M.; Calderini, G.; Crescioli, F.; Marchiori, G.; Dzahini, D.; Rarbi, F.; Gaglione, R.; Krueger, Hans; Hemperek, T.; Huegging, F.; Rymazewski, P.; Vogt, M.; Wang, T.; Wermes, N.; Karagounis, M.; Marzocca, C.; Loddo, F.; Licciulli, F.; Andreazza, A.; Liberali, V.; Stabile, A.; Frontini, Luca; Bagatin, M.; Bisello, D.; Gerardin, Simone; Mattiazzo, Serena; Paccagnella, A.; Vogrig, D.; Bonaldo, Stefano; Bacchetta, N.; Gaioni, L.; Manghisoni, M.; Re, V.; Riceputi, E.; Traversi, G.; Ratti, L.; Vacchi, C.; Androsov, K.; Beccherle, R.; Magazzù, G.; Minuti, M.; Morsani, F.; Palla, F.; Poulios, S.; Bilei, G. M.; Menichelli, M.; Placidi, P.; Marconi, S.; Dellacasa, G.; Demaria, N.; Mazza, G.; Monteil, E.; Pacher, L.; Rivetti, A.; Paterno, A.; Gajanna, Deepak; Gromov, V.; Kluit, R.; Vitkovskiy, A.; Benka, T.; Havránek, M.; Janoska, Z.; Marčišovský, M.; Neue, G.; Tomášek, L.; Kafka, V.; Vrba, V.; López-Morillo, E.; Palomo, F.R.; Muñoz, F.; Vila, I.; Jiménez, E. Silva; Abbaneo, D.; Christiansen, J.; Orfanelli, S.; Bell, S.; Prydderch, M.; Thomas, S.L.; Christian, David; Deptuch, G.; Fahim, Farah; Hoff, J.; Zimmerman, T.; Miryala, Sandeep; Garcia-Sciveres, M.; Gnani, D.; Krieger, A.; Papadopoulou, K.; Heim, T.; Carney, R. M. D.; Nachman, B. P.; Renteira, C.; Wallangen, V.; Hoeferkamp, M. R.; Seidel, S. C.; Daas, M.; Dieter, Y.; Moustakas, Konstantinos; Stiller, A.; Lipton, R.; Liu, T. C.

doi:10.22323/1.343.0157

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…The basic functionalities of the RD53A chip and each of the three AFEs were previously verified and reported [22][23][24][25][26]. The objective of this work was to evaluate the three AFE designs against the CMS requirements, in terms of spurious hit rate, dead time, and radiation tolerance and to compare their performance.…”

Section: Trimmingmentioning

confidence: 99%

Comparative evaluation of analogue front-end designs for the CMS Inner Tracker at the High Luminosity LHC

et al. 2021

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The CMS Inner Tracker, made of silicon pixel modules, will be entirely replaced prior to the start of the High Luminosity LHC period. One of the crucial components of the new Inner Tracker system is the readout chip, being developed by the RD53 Collaboration, and in particular its analogue front-end, which receives the signal from the sensor and digitizes it. Three different analogue front-ends (Synchronous, Linear, and Differential) were designed and implemented in the RD53A demonstrator chip. A dedicated evaluation program was carried out to select the most suitable design to build a radiation tolerant pixel detector able to sustain high particle rates with high efficiency and a small fraction of spurious pixel hits. The test results showed that all three analogue front-ends presented strong points, but also limitations. The Differential front-end demonstrated very low noise, but the threshold tuning became problematic after irradiation. Moreover, a saturation in the preamplifier feedback loop affected the return of the signal to baseline and thus increased the dead time. The Synchronous front-end showed very good timing performance, but also higher noise. For the Linear front-end all of the parameters were within specification, although this design had the largest time walk. This limitation was addressed and mitigated in an improved design. The analysis of the advantages and disadvantages of the three front-ends in the context of the CMS Inner Tracker operation requirements led to the selection of the improved design Linear front-end for integration in the final CMS readout chip.

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Section: Trimmingmentioning

confidence: 99%

Comparative evaluation of analogue front-end designs for the CMS Inner Tracker at the High Luminosity LHC

et al. 2021

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“…The sensor is bump-bonded via solder bumps (by Fraunhofer IZM [14]) to the RD53A readout chip [15,16], a prototype readout chip for the ATLAS ITk pixel detector.…”

Section: Pixel Sensor Designmentioning

confidence: 99%

Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip

Dieter,

Daas,

Dingfelder

et al. 2021

Preprint

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The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 µm thin passive CMOS sensor with a pixel pitch of 50 µm at different irradiation levels, 5 × 10 15 n eq cm −2 and 1 × 10 16 n eq cm −2 , is presented. The sensor was bumpbonded and read out using the RD53A readout chip. After the highest fluence a hit-detection efficiency larger than 99 % is measured for minimum ionising particles. The measured equivalent noise charge is comparable to conventional planar pixel sensors. Passive CMOS sensors are thus an attractive option for silicon detectors operating in radiation harsh environments like the upgrades for the LHC experiments.

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Design of a Pixel Readout ASIC Using Super Pixel Circuits With a Built-In LDO Regulator for Hybrid X-Ray Imaging Detectors

Cheng,

Gao,

et al. 2024

IEEE Trans. Circuits Syst. II

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RD53A: a large scale prototype for HL-LHC silicon pixel detector phase 2 upgrades

Cited by 3 publications

References 5 publications

Comparative evaluation of analogue front-end designs for the CMS Inner Tracker at the High Luminosity LHC

Comparative evaluation of analogue front-end designs for the CMS Inner Tracker at the High Luminosity LHC

Radiation tolerant, thin, passive CMOS sensors read out with the RD53A chip

Design of a Pixel Readout ASIC Using Super Pixel Circuits With a Built-In LDO Regulator for Hybrid X-Ray Imaging Detectors

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