A new pixel readout integrated circuit denominated FE-I4 is being designed to meet the requirements of ATLAS experiment upgrades. It will be the largest readout IC produced to date for particle physics applications, filling the maximum allowed reticle area. This will significantly reduce the cost of future hybrid pixel detectors. In addition, FE-I4 will have smaller pixels and higher rate capability than the present generation of LHC pixel detectors. Design features are described along with simulation and test results, including low power and high rate readout architecture, mixed signal design strategy, and yield hardening.

The ATLAS IBL CollaborationDuring the shutdown of the CERN Large Hadron Collider in 2013-2014, an additional pixel layer was installed between the existing Pixel detector of the ATLAS experiment and a new, smaller radius beam pipe. The motivation for this new pixel layer, the Insertable B-Layer (IBL), was to maintain or improve the robustness and performance of the ATLAS tracking system, given the higher instantaneous and integrated luminosities realised following the shutdown. Because of the extreme radiation and collision rate environment, several new radiation-tolerant sensor and electronic technologies were utilised for this layer. This paper reports on the IBL construction and integration prior to its operation in the ATLAS detector.The ATLAS [1] general purpose detector is used for the study of proton-proton (pp) and heavy-ion collisions at the CERN Large Hadron Collider (LHC) [2]. It successfully collected data at pp collision energies of 7 and 8 TeV in the period of 2010-2012, known as Run 1. Following an LHC shutdown in 2013-2014 (LS1), it has collected data since 2015 at a pp collision energy of 13 TeV (the so-called Run 2).The ATLAS inner tracking detector (ID) [1, 3] provides charged particle tracking with high efficiency in the pseudorapidity 1 range of |η| < 2.5. With increasing radial distance from the interaction region, it consists of silicon pixel and micro-strip detectors, followed by a transition radiation tracker (TRT) detector, all surrounded by a superconducting solenoid providing a 2 T magnetic field.The original ATLAS pixel detector [4,5], referred to in this paper as the Pixel detector, was the innermost part of the ID during Run 1. It consists of three barrel layers (named the B-Layer, Layer 1 and Layer 2 with increasing radius) and three disks on each side of the interaction region, to guarantee at least three space points over the full tracking |η| range. It was designed to operate for the Phase-I period of the LHC, that is with a peak luminosity of 1 × 10 34 cm −2 s −1 and an integrated luminosity of approximately 340 fb −1 corresponding to a TID of up to 50 MRad 2 and a fluence of up to 1 × 10 15 n eq /cm 2 NIEL. However, for luminosities exceeding 2 × 10 34 cm −2 s −1 , which are now expected during the Phase-I operation, the read-out efficiency of the Pixel layers will deteriorate. This paper describes the construction and surface integration of an additional pixel layer, the Insertable B-Layer (IBL) [6], installed during the LS1 shutdown between the B-Layer and a new smaller radius beam pipe. The main motivations of the IBL were to maintain the full ID tracking performance and robustness during Phase-I operation, despite read-out bandwidth limitations of the Pixel layers (in particular the B-Layer) at the expected Phase-I peak luminosity, and accumulated radiation damage to the silicon sensors and front-end electronics. The IBL is designed to operate until the end of Phase-I, when a full tracker upgrade is planned [7] for high luminosity LHC (HL-LHC) operation from approximately ...

The radiation tolerance of 65 nm bulk CMOS devices was investigated using 10 keV X-rays up to a Total Ionizing Dose (TID) of 1 Grad. Irradiation tests were performed at room temperature (25 • C) as well as at low temperature (−15 • C). The implications on the DC performance of n and p channel transistors are presented. For small size devices, a strong performance degradation is observed from a dose of 100 Mrad. Irradiations made at room temperature up to 1 Grad show a complete drive loss in PMOS devices, due to decreasing transconductance. When the irradiation is conducted at −15 • C, the devices show less radiation damage. Annealing helps recovering a small part of the drive capabilities of the small size devices, but the threshold voltage shift is still high and might compromise the operation in some digital applications.