RC delay reduction of 0.18 μm CMOS technology using low dielectric constant fluorinated amorphous carbon

Matsubara, Y.; Kishimoto, Koji; Endo, Kazuhiko; Iguchi, Manabu; Tatsumi, Toru; Gomi, H.; Horiuchi, T.; Tzou, E. Y.; Xi, Ming Jun; Cheng, Lili; Tribula, D.; Moghadam, Farhad

doi:10.1109/iedm.1998.746486

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“…These reported films are spin-on materials deposited by a spinner and then thermally cured, whereas, we have been advocating the use of CVD to deposit low dielectric constant (low-k) polymers and have integrated chemical-vapor-deposited a-C:F films into CMOS circuits [2]. The CVD method uses a thermal excitation or glow discharge to activate species such as radicals from the original monomer.…”

Section: Introductionmentioning

confidence: 98%

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Phenyl Silica Glass for Formation of Porous Dielectric Film

1999

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Phenyl and alkyl groups were introduced into silica glass in order to prevent the formation of a Si-O network and reduce its density and to reduce the dielectric constant of the glass. In this regard, the phenyl group was more effective than the alkyl group. The measured Si-O intensity of FTIR spectrum of the glass with introduced phenyl was only 14% of thermal SiO 2 film, however, the thermally stable carbon component prevented further reduction in density after 400°C annealing.

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Section: Introductionmentioning

confidence: 98%

“…We have deposited an a-C:F film that has a dielectric constant of 2.5 and that is stable up to temperatures near 400'C. We recently fabricated 0.18-tim CMOS circuits using a-C:F ILDs and W plugs, and have reduced the periodic time (Tp) of ring oscillator circuits by reducing the wiring delay [2].…”

Section: Introductionmentioning

confidence: 99%