RBS characterization of iridium silicides formed by RTA in vacuum

Rodrı́guez, T.; Almendra, A.; Silva, M.F. da; Soares, J.C.; Wolters, H.; Rodrı́guez, A.; Sanz‐Maudes, J.

doi:10.1016/0168-583x(95)01411-x

Cited by 10 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…IrSi 3 samples appear dark and exhibit low reflectivity. 10 Under our processing conditions, this phase appears in the hexagonal form, as deduced from soft x-ray emission measurements. 12 The Raman spectra are separated into two spectral ranges.…”

Section: Resultsmentioning

confidence: 98%

See 1 more Smart Citation

Micro‐Raman study of iridium silicides

Almendra

Rodrı́guez

et al. 2002

J Raman Spectroscopy

Self Cite

View full text Add to dashboard Cite

The micro-Raman spectra of three iridium silicides, IrSi, IrSi 1.75 and IrSi 3 , were obtained. The silicides were prepared by rapid thermal annealing of iridium films deposited on Si substrates. The three phases were identified by Rutherford backscattering spectrometry. The main bands observed in the micro-Raman spectra are described in order to provide a simple characterization method for these silicides with high spatial resolution. The three silicides present phonon bands around 165 and 200 cm −1 . Some additional broad bands between 240 and 500 cm −1 were also observed.

show abstract

Section: Resultsmentioning

confidence: 98%

“…Further details on the deposition process have been reported elsewhere. 10 Silicidation was carried out under vacuum by rapid thermal annealing (RTA). The pressure was held below 2 ð 10 5 Torr (1 Torr D 133.3 Pa) during the annealing process.…”

Section: Methodsmentioning

confidence: 99%

Micro‐Raman study of iridium silicides

Almendra

Rodrı́guez

et al. 2002

J Raman Spectroscopy

Self Cite

View full text Add to dashboard Cite

show abstract

“…The stoichiometry of the last silicide phase is still subject to debate: x = 1.5, 14 x = 1.6, 11,15 or x = 1.75. 12,16 Finally for activation temperatures close to 1000 °C, the formation of IrSi 3 was also reported. 12,16 In this paper, we propose a detailed study of the mechanisms of iridium silicidation using various annealing conditions such as ultrahigh vacuum ͑UHV͒ and rapid thermal annealing with a particular attention on the interface reaction at room temperature, on the stoichiometry of the silicide and on the optimum conditions to obtain the lowest specific contact resistance.…”

Section: Introductionmentioning

confidence: 80%

“…Many stoichiometric flavors of iridium silicide have been suggested in the literature. [11][12][13][14][15][16] Several studies have pointed that iridium silicidation involves three successive phases: first, the formation of the IrSi phase was observed at ambient temperature, 11 400 °C, 12 450 °C, 13 while another IrSi x silicide was observed at a temperature close to 600 °C. The stoichiometry of the last silicide phase is still subject to debate: x = 1.5, 14 x = 1.6, 11,15 or x = 1.75.…”

Section: Introductionmentioning

confidence: 99%

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

Larrieu¹,

Dubois²,

Wallart³

et al. 2007

Journal of Applied Physics

View full text Add to dashboard Cite

A detailed study of the formation of iridium silicide obtained by ultrahigh vacuum annealing and atmospheric rapid thermal processing is proposed using x-ray photoelectron spectroscopy ͑XPS͒, transmission electron microscopy ͑TEM͒, and electrical characterizations. Using XPS analysis, the stoichiometry of each silicide phase ͑IrSi, IrSi 1.6 ͒ is identified. A model based on the variation of the measured intensity of the Ir 4f spectra is used to obtain the kinetic coefficients of reaction of Ir silicidation ͑E A = 2.48 eV, D 0 =9 cm 2 /s͒. TEM cross sections indicate that the roughness of the silicide/silicon interface increases with temperature. Lastly, electrical characteristics are used to identify the optimum annealing temperature to obtain an iridium silicide contact with the lowest Schottky barrier height to holes.

show abstract

“…Ir metal, IrSi and Ir 3 Si 5 compounds can coexist in samples processed at temperatures below 950 • C [6]. The thickness of each phase depends on the thickness of the as-deposited Ir, and the temperature and processing time.…”

Section: Methodsmentioning

confidence: 99%

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)

Almendra

Rodrı́guez

et al. 2002

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Si L 2,3 soft-x-ray emission spectra of IrSi, Ir 3 Si 5 and IrSi 3 compounds have been taken and the valence band densities of states associated with them have been analysed as functions of the concentration of Si atoms, the coordination number of Si-Ir in the iridium silicide compounds and the average distances of the Si-Si bonds in those compounds. The role of silicon 3s3d states in the bonding of the different iridium silicides is discussed. All the spectra show two regions, one associated with the low-energy Si 3s states and another one associated with high-energy Si 3s3d states. The effects of the interaction between the Si and Ir atoms in the silicides are: (a) the distribution of silicon states, even those associated with the least energetic s electrons, are modified, suggesting that the s electrons play a role in the formation of the iridium silicides; (b) the energy bandwidth corresponding to the Si 3s3d states increases up to 2.5 eV as the number of Si atoms that interact with the Ir atoms increases; and (c) there is a significant contribution from the d electrons, the fraction of the states associated with them being at least 20% of the total of states associated with the 3s3d states.

show abstract

RBS characterization of iridium silicides formed by RTA in vacuum

Cited by 10 publications

References 9 publications

Micro‐Raman study of iridium silicides

Micro‐Raman study of iridium silicides

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)

Contact Info

Product

Resources

About

RBS characterization of iridium silicides formed by RTA in vacuum

Cited by 10 publications

References 9 publications

Micro‐Raman study of iridium silicides

Micro‐Raman study of iridium silicides

Kinetics, stoichiometry, morphology, and current drive capabilities of Ir-based silicides

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir3Si5and IrSi3)

Contact Info

Product

Resources

About

The role of the Si 3s3d states in the bonding of iridium silicides (IrSi, Ir₃Si₅and IrSi₃)