Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors

Abliz, Ablat; Huang, Chun Wei; Wang, Jingli; Xu, Lei; Liao, Lei; Xiao, Xiangheng; Wu, Wen‐Wei; Fan, Zhiyong; Jiang, Changzhong; Li, Jinchai; Guo, Shishang; Liu, Chuansheng; Guo, Tao

doi:10.1021/acsami.5b10778

Cited by 78 publications

(35 citation statements)

References 45 publications

(68 reference statements)

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“…The best PBS stability appeared for those prepared at 100 °C, as shown in Figure d. Meanwhile, a small shift in the threshold voltage of 0.43 V was observed, which was superior to that prepared by the sputtering in which the shift of the threshold voltage was as high as 2.7 V . Mainly, three factors influence the PBS stability of the TFTs, i.e., the electron trapping happened near the interface between the channel and the dielectric layers, the charge injection from the channel layer into the dielectric layer, and the oxygen molecules adsorbed as well as the water molecules desorbed in the back channel induced by the positive gate bias due to the absence of passivation layers of the ZnO TFTs .…”

Section: Resultsmentioning

confidence: 95%

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Chen

Zhang

Wan

et al. 2018

Adv Elect Materials

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High‐performance, transparent, and flexible thin‐film transistors (TFTs) with polycrystalline channels in a bottom‐gate structure are successfully fabricated at extremely low temperatures of 80, 90, and 100 °C by atomic layer deposition (ALD) in which ZnO and Al2O3 are used as channels and dielectric layers, respectively. The transistors are superior to silicon‐based TFTs in which high temperatures are necessarily involved in both preparation and postgrowth annealing. Among all devices, TFTs grown at 100 °C exhibit the best performance which can be attributed to the lowest grain boundary trap density. Additionally, the TFTs are successfully transferred to plastic substrates without any performance degradation, which shows a high mobility of 37.1 cm2V−1 s−1, a high on/off‐state current ratio of 107 at VDS = 0.1 V, a small subthreshold swing of 0.38 V dec−1, and a proper threshold voltage of 1.34 V as well as an excellent bias stability.

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Section: Resultsmentioning

confidence: 95%

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Chen

Zhang

Wan

et al. 2018

Adv Elect Materials

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“…In this review, we summarize the recent progress of solution-processed heterostructure oxide TFTs. The heterojunction channel strategy could address the shortcomings of single-layer devices, providing a new route for future TFT technology development [34][35][36].…”

Section: Introductionmentioning

confidence: 99%

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Zhao

Zhu

et al. 2020

Nanomaterials

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Thin-film transistors (TFTs) made of metal oxide semiconductors are now increasingly used in flat-panel displays. Metal oxides are mainly fabricated via vacuum-based technologies, but solution approaches are of great interest due to the advantages of low-cost and high-throughput manufacturing. Unfortunately, solution-processed oxide TFTs suffer from relatively poor electrical performance, hindering further development. Recent studies suggest that this issue could be solved by introducing a novel heterojunction strategy. This article reviews the recent advances in solution-processed heterojunction oxide TFTs, with a specific focus on the latest developments over the past five years. Two of the most prominent advantages of heterostructure oxide TFTs are discussed, namely electrical-property modulation and mobility enhancement by forming 2D electron gas. It is expected that this review will manifest the strong potential of solution-based heterojunction oxide TFTs towards high performance and large-scale electronics.

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“…Oxygen deficient phase has been attributed to the presence of commonly associated impurities such as hydrogen on the oxygen sites [5][6][7]. ZnO with n-type conductivity finds application for use in transparent solar cell conductors and displays and as bilayer for low-cost thin film electronics [8,9].…”

Section: Introductionmentioning

confidence: 99%

Sol-Gel Syntheses of Zinc Oxide and Hydrogenated Zinc Oxide (ZnO:H) Phases

Konne

Christopher

2017

Journal of Nanotechnology

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ZnO synthesized by chemical precipitation with varying starch concentrations (0.00, 0.01, 0.02, 0.05, 0.10, 0.15, and 0.20%) as stabilizing agent was used in making ZnO:H when placed in a glass tube under mild heat and hydrogen (H2) gas flow for 2 mins. Observations showed that the sample colour changed from white to light brown and finally to dark brown during the process particularly for the ZnO-starch samples. XRD data of ZnO (0.02%) and ZnO:H (0.02%) showed ZnO as the major phase with Zn(OH)2 impurity phase and a new ZnO:H peak at 2θ, 29.60° for ZnO and ZnO:H, respectively. The estimated particle sizes determined from XRD were 47 and 30 nm, respectively. The SEM of the 0.02% ZnO appeared more microporous and needle-like than those of 0.01%, while the EDX of both confirmed Zn and O as the main components. Different conductivities of 30.90 and 27.50 μS/cm were obtained for ZnO and ZnO:H samples in ethanol, respectively. Also, the UV-Vis absorption for both showed n-type and p-type material absorption bands at 310 cm−1, while the intensities of all the characteristic ZnO IR bands at 430–552 (ZnO vibrations) and 1500–1640 cm−1 (Zn-O stretching) increased for the corresponding ZnO:H samples.

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Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors

Cited by 78 publications

References 45 publications

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Transparent and Flexible Thin‐Film Transistors with High Performance Prepared at Ultralow Temperatures by Atomic Layer Deposition

Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors

Sol-Gel Syntheses of Zinc Oxide and Hydrogenated Zinc Oxide (ZnO:H) Phases

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