Rate-temperature relation for MBE growth of GaAs layers

Kadhim, N. J.; Mukherjee, Debashis

doi:10.1080/00207219008920350

Cited by 3 publications

(1 citation statement)

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“…This phenomenon was also reported in the MBE growth of GaAs. 47,48 In general, there is an optimized growth temperature, around which the adsorption, diffusion, and bonding processes coordinate with each other to achieve the highest growth speed. Decreasing the temperature will hinder the diffusion and bonding processes, while increasing the temperature will enhance desorption exponentially.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

Tian

Das

et al. 2020

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) hexagonal boron nitride (h-BN) plays a significant role in nanoscale electrical and optical devices because of its superior properties. However, the difficulties in the controllable growth of high-quality films hinder its applications. One of the crucial factors that influence the quality of the films obtained via epitaxy is the substrate property. Here, we report a study of 2D h-BN growth on carburized Ni substrates using molecular beam epitaxy. It was found that the carburization of Ni substrates with different surface orientations leads to different kinetics of h-BN growth. While the carburization of Ni(100) enhances the h-BN growth, the speed of the h-BN growth on carburized Ni(111) reduces. As-grown continuous single-layer h-BN films are used to fabricate Ni/h-BN/Ni metal–insulator–metal (MIM) devices, which demonstrate a high breakdown electric field of 12.9 MV/cm.

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Section: ■ Results and Discussionmentioning

confidence: 99%