Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

He, Yuhui; Tian, Hao; Das, Protik; Cui, Zhenjun; Pena, Pedro; Chiang, Ivan; Shi, Wenhao; Xu, Long; Li, Yuan; Yang, Tianchen; Isarraraz, Miguel; Ozkan, Cengiz S.; Ozkan, Mihrimah; Lake, Roger K.; Liu, Jianlin

doi:10.1021/acsami.0c07201

Cited by 8 publications

(11 citation statements)

References 65 publications

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“…The RHEED patterns for the Ni(111) substrate are slightly dotty, which are attributed to oxidation after being exposed to air . In addition, due to the surface corrugations after h-BN film growth, the RHEED patterns obtained on h-BN films are also faint. Nevertheless, the coverage-dependent RHEED analysis confirms that there is no in-plane rotation between h-BN and the Ni(111) surface, further indicated by theoretical calculations. , …”

Section: Resultsmentioning

confidence: 99%

“…Additional h-BN growth results are available in the Supporting Information section (Figure S3). Our recent article reported on the h-BN growth on mechanically polished Ni(111) substrates under similar growth conditions . We have discovered that the growth speed on electropolished substrates is nearly 20 times faster compared to the growth speed on mechanically polished substrates .…”

Section: Resultsmentioning

confidence: 99%

“…Substituting C m , C g , and C q into eq yields C v of 0.033 pF/μm 2 , and the corresponding effective vacuum layer thickness calculated based on eq is 2.68 Å. The vacuum layer can be attributed to the corrugations of the h-BN film, , metal substrate surface reconstruction, , and crystallographic defects on metal contacts such as grain boundaries, atomic steps, and dislocations. The interface of the Al/h-BN stack was characterized using AFM, and the result is shown in Figure S8, where differences in the surface roughness would indicate the presence of vacuum gaps.…”

Section: Resultsmentioning

confidence: 99%

“…Our recent article reported on the h-BN growth on mechanically polished Ni(111) substrates under similar growth conditions. 14 We have discovered that the growth speed on electropolished substrates is nearly 20 times faster compared to the growth speed on mechanically polished substrates. 14 The reason for this dramatic improvement could be the availability of many more h-BN nucleation sites obtained via electropolishing.…”

Section: Resultsmentioning

confidence: 99%

“…Chen et al reported that the metal–insulator–metal (MIM) devices comprising (Ti/h-BN/Cu) layers on polycrystal monolayer h-BN films are almost conductive, while those on single-crystal monolayer h-BN films have a small breakdown voltage at 0.1 V . In contrast, the breakdown voltage of MIM devices with Ni and Co as electrodes on our MBE-grown monolayer h-BN films is around 0.8 V, indicating higher film quality. − One issue in these h-BN samples is the long growth time required to obtain a continuous h-BN film, which is not efficient.…”

Section: Introductionmentioning

confidence: 93%

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Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films

Isarraraz

et al. 2021

ACS Appl. Nano Mater.

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Two-dimensional wafer-scale and single-crystal hexagonal boron nitride (h-BN) films are considered a crucial part of the next generation of van der Waals (vdW) electronic devices. Progress has been made in the synthesis process recently, leading to the demonstration of electronic devices. In this work, we report an effective method to synthesize high-quality single-crystal h-BN monolayer films. Single-crystal metal substrates were produced by thermal annealing of Ni foils, followed by electropolishing to remove the passivated surface layer. Molecular beam epitaxy was employed to synthesize 1 in.2 monolayer single-crystal h-BN films. We discovered that electropolishing plays an important role in drastically increasing the speed of h-BN film growth. Robust nanocapacitors were fabricated using as-grown monolayer h-BN films. The nanocapacitance effect and tunneling current mechanism were studied in detail, and the “effective distance” concept is introduced to explain the quantum phenomenon in the (vdW) metal–insulator–metal devices using atomically thin dielectric h-BN films.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 93%

See 3 more Smart Citations

Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films

Isarraraz

et al. 2021

ACS Appl. Nano Mater.

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A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications

2022

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Ga-N, In-P, etc. Crystalline BN has typically been perceived as a purely synthetic material, [1] however geological findings provide evidence of structures similar to BN in rocks. [2] BN exhibits several stable crystal forms (see Figure 1A), for example, i) sp 3 bonded cubic and wurtzite forms; and ii) sp 2 bonded hexagonal and rhombohedral forms. [3] The cubic BN (c-BN) form has "zincblende" type crystal structure consisting of overlapping fcc cubic lattices consisting of B and N atoms. The c-BN crystal structure is analogous to that of diamond. The wurtzite form of BN (w-BN) is also sp 3 bonded like c-BN, however the wurtzite form consists of a hexagonal lattice with each ring sitting in a boat configuration. The w-BN crystal structure is analogous to that of the rare lonsdaleite, a carbon allotrope formed from graphite under immense heat and pressure. [4] Hexagonal boron nitride (h-BN) is a layered hexagonal crystal (a = 2.505 Å and c = 6.653 Å) belonging to the P6 3 /mmc space group with a structure analogous to that of graphite. [11,12] Alternating B and N atoms are sp 2 bonded in-plane to form a hexagonal lattice and several such layers are stacked to form the bulk h-BN crystal (Figure 1B). [11,12] The BN sp 2 bonding results in strong in-plane σ bonds leading to high in-plane thermal conductivity, chemical stability and strength, while empty π orbitals make h-BN electrically insulating (bandgap ≈ 5.955 eV). [3,13] The in-plane BN bonds exhibit ionic behavior due to the stronger electronegativity of the N atoms and results in layer to layer interactions between h-BN layers leading to AA′ stacking configuration, that is, each N atom in one layer is directly above the B atoms of the next layer (Figure 1B). [14] In addition to AA′ stacking, AB stacking (Bernal stacking) has also been occasionally observed in thin h-BN films even though this is a higher energy configuration. [15,5] Finally, BN is also observed in rhombohedral form (r-BN). Each layer of r-BN is the same crystal structure as that of h-BN (Figure 1A), however r-BN follows an ABC stacking configuration whereby boron still sits atop nitrogen atoms, except layers are offset such that the 1 and 3 atoms (N and N for example) sit atop the 4 and 6 atoms (B and B in this example) of the ring below. [3] Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-qual...

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Realization of electronic grade graphene and h-BN

Babenko

Hofmann

2022

Defects in Two-Dimensional Materials

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Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal–Insulator–Metal Tunneling Devices

Cited by 8 publications

References 65 publications

Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films

Robust Nanocapacitors Based on Wafer-Scale Single-Crystal Hexagonal Boron Nitride Monolayer Films

A Review of Scalable Hexagonal Boron Nitride (h‐BN) Synthesis for Present and Future Applications

Realization of electronic grade graphene and h-BN

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