Rate Equations for 1.3-&lt;tex&gt;$mu$&lt;/tex&gt;m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers

Tong, Cunzhu; Yoon, S. F.; Ngo, C. Y.; Liu, C.Y.; Loke, Wan Khai

doi:10.1109/jqe.2006.883471

Cited by 59 publications

(32 citation statements)

References 39 publications

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“…These models, however, are prone to oversimplification, possibly neglecting important aspects that would lead to different results. In between these two types of approaches there exist multi-rate equation models [TON06,LUE09,GIO12,WAN14b], that take into account the delicate energy structure of quantum-dot active media. These models offer a balance between complexity and practicability.…”

Section: Introductionmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Introductionmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…[7][8][9] To explain the temperature sensitivity of QD lasers, different mechanisms have been proposed in the literature. First, thermal escape of carriers from QDs to the wetting layer ͑WL͒ and barriers, and associated radiative recombination, has been evoked 8,[10][11][12] to explain the reduced gain and larger threshold current for increasing temperatures. On the other hand, strong evidence for nonradiative ͑NR͒ processes-in particular in the WLhas been found in the temperature dependence of both QD photoluminescence ͑PL͒ 13,14 and laser characteristics, [15][16][17] and this process has been incorporated in laser models to reproduce the experimental T 0 .…”

Section: Introductionmentioning

confidence: 99%

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Rossetti

Fiore

Sęk

et al. 2009

Journal of Applied Physics

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A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 m is reported. The temperature dependence of carrier lifetime, radiative efficiency, threshold current, differential efficiency, and gain is measured, and compared to the theoretical results based on a rate equation model. The model accurately reproduces all experimental laser characteristics above room temperature. The degradation of laser characteristics with increasing temperature is clearly shown to be associated to the thermal escape of holes from the confined energy levels of the dots toward the wetting layer and the nonradiative recombination therein.

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“…The RIN for GaN/Al 0.25 Ga 0.75 N/AlN QD lasers has been computed using Eq. (13). The parameters used in the calculation are listed in Table 1.…”

Section: Resultsmentioning

confidence: 99%

“…These fluctuations are of great importance since they introduce errors in optical communications. In fact, every spontaneous emission event in the oscillating mode, varying the phase of the electromagnetic field (quantum noise) is responsible for the carrier density variation [13].…”

Section: Introductionmentioning

confidence: 99%

Factors Affecting the Relative Intensity Noise of GaN Quantum Dot Lasers

AL-Husseini¹

2012

Quantum Dots - A Variety of New Applications

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Rate Equations for 1.3-<tex>$mu$</tex>m Dots-Under-a-Well and Dots-in-a-Well Self-Assembled InAs–GaAs Quantum-Dot Lasers

Cited by 59 publications

References 39 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Modeling the temperature characteristics of InAs/GaAs quantum dot lasers

Factors Affecting the Relative Intensity Noise of GaN Quantum Dot Lasers

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