Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

Stiff‐Roberts, Adrienne D.; Chakrabarti, Subhananda; Pradhan, S. Sandeep; Kochman, B.; Bhattacharya, P.

doi:10.1063/1.1476387

Cited by 37 publications

(11 citation statements)

References 13 publications

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“…While the imaging of these devices was not superlative, as they were intended as proofs of concept more than final designs, they do produce recognizable images. Due to the low dark current densities present, even the initial devices were capable of operating up to 150 K in the MWIR regime [88,206]. As the decade moved forward, progress addressed a number of QDIP issues.…”

Section: Quantum Dot Infrared Photodetectors (Qdips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

223

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Quantum Dot Infrared Photodetectors (Qdips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

223

110

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“…Self-assembled quantum dot (QD) and its related heterostructures have been receiving considerable attention as potential semiconductor nanostructures applicable to QD-based optoelectronic devices such as laser diodes [1], infrared photodetectors [2,3]. By virtue of unique zerodimensional features and strong confinement of the carrier wave functions in QDs, the structures have emerged as scientifically important systems not only in device applications but also in fundamental studies.…”

Section: Introductionmentioning

confidence: 99%

Evolution of bimodal size-distribution on InAs coverage variation in as-grown InAs/GaAs quantum-dot heterostructures

Lee

Noh

Choe

et al. 2004

Journal of Crystal Growth

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“…The first QDIP imaging came from a raster scan system in 2002 [34]. By leveraging its prior development of QWIP FPAs [35], CQD produced the first QDIP-based FPA in 2004 [22].…”

Section: First Qdip Fpamentioning

confidence: 99%

Quantum Dots

and

Razeghi

2015

Photonics

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INTRODUCTIONThe strong interest in low dimensional semiconductor structures originates from their exciting electronic properties, which can have an important impact on the performance of electronic and photonic devices. The quantum dots (QDs), also known as quantum boxes, are nanometer scale islands in which electrons and holes are confined in threedimensional (3D) potential boxes. They are expected to show a zero-dimensional (0D), -function density of states and are able to quantize an electron's free motion by trapping it in a quasi-0D potential confinement. As a result of the strong confinement imposed in all three spatial dimensions, quantum dots are similar to atoms. They are frequently referred to as "artificial atoms." Due to this confinement, novel physical properties will emerge, which can lead to new semiconductor devices as well as drastically improved device performance.As the particles are confined in all three dimensions, there is no dispersion curve and the density of states is just dependent on the number of confined levels. For one single dot, only two (spin-degenerate) states exit at each energy level and the plot of the density of states versus energy will be a series of -functions. Figure 6.1 shows the change of the density states from a bulk system to the low dimensional systems of quantum wells (QWL), quantum wires (QWR), and QDs. The calculation of these density of states can be found in an introductory solid state text [1].In QDs, the width of the electron energy distribution is zero in an ideal case. This means that electrons in those structures are distributed in certain discrete energyFIGURE 6.1 Density of state of zero-dimensional (upper left), one-dimensional (upper right), two-dimensional (lower left), and bulk (lower right) systems.levels, and the energy distribution width is fundamentally independent of temperature.In real semiconductor structures, due to many interaction processes such as electronelectron and electron-phonon scattering (which can also be reduced by QDs due to the lack of phonons to satisfy the energy conservation, which is the so-called phonon bottleneck [2]), a certain width in the electron energy distribution exists. However it is expected to be much smaller compared to bulk and QW systems. The condition for novel and interesting electronic properties to occur in a QDbased device is that the lateral size of the QD should be smaller than the coherence length and the elastic scattering length of the carriers. Additional quantum-size effects require the structural features to be reduced to the range of the de Broglie wavelength. The advantages in operation depend not only on the absolute size of the nanostructures in the active region, but also on the uniformity of size and shape. A large distribution of sizes would "smear" the density of states of QDs thus making it more like that of bulk material. Therefore, the repeatable fabrication of these nanometer 3D quantum structures requires methods with atomic scale accuracy, which presents a major challenge for current...

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Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors

Cited by 37 publications

References 13 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Evolution of bimodal size-distribution on InAs coverage variation in as-grown InAs/GaAs quantum-dot heterostructures

Quantum Dots

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