Rare earth doped III-nitrides for optoelectronics

O'Donnell, K.P.; Hourahine, B.

doi:10.1051/epjap:2006122

Cited by 68 publications

(44 citation statements)

References 61 publications

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“…A detailed discussion about the interpretation of this clear gap can be found in Ref. 62 and references therein. The DOS changes are consistent with what is observed for the band structure: The f-related peak in the band gap is removed, leaving the GaN band gap free again.…”

Section: B Substitutional Er Gamentioning

confidence: 99%

Efficient tight-binding approach for the study of strongly correlated systems

et al. 2007

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In this work, we present results from self-consistent charge density functional based tight-binding ͑DFTB͒ calculational scheme, including local-density approximation +U ͑LDA+U͒ and simplified self-interactioncorrected-like potentials for the simulation of systems with localized strongly correlated electrons. This approach attempts to combine the efficiency of tight binding with the accuracy of more sophisticated ab initio methods and allows treatment of highly correlated electrons for very large systems. This is particularly interesting for the case of rare earths in GaN, where dilute amount of rare earth ions is used. In this work, we show the results of test calculations on bulk ErN and on the substitutional Er Ga in wurtzite GaN, which we choose as representatives of bulk and point defects in solids with strongly correlated electrons. We find that ErN is a half metal in the ferromagnetic phase and that the substitutional Er Ga in wurtzite GaN has C 3v symmetry. These examples show that the DFTB approach reproduces well the results of more demanding calculation schemes with a very low computational cost, making it suitable for the study of extended systems beyond the capabilities of density functional theory.

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Section: B Substitutional Er Gamentioning

confidence: 99%

Efficient tight-binding approach for the study of strongly correlated systems

et al. 2007

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“…The above bandgap pump creates electrons in the GaN conduction band that relax primarily through non-radiative transitions, presumably through defects, to the upper Nd bands, eventually ending up in the 4 F 3/2 band. In many RE-doped GaN materials, these defects aid in electron transfer to the RE atom, often leading to stronger PL emission from multiple "sites" as described by O'Donnell et al (15). Moreover, when Nd ions occupy multiple sites within the GaN matrix, the PL for above and below bandgap excitation can reveal markedly different spectra.…”

Section: Optical Studies Of Nd-doped Ganmentioning

confidence: 99%

Rare-Earth Doped Gallium Nitride (GaN)- An Innovative Path Toward Area-scalable Solid-state High Energy Lasers Without Thermal Distortion

Wraback¹,

Dubinskiy²

2009

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Sensors and Electron Devices Directorate, ARLApproved for public release; distribution unlimited. ii REPORT DOCUMENTATION PAGE Form Approved OMB No. 0704-0188Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing the burden, to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY)April 2009 ARL-TR-4794 SPONSOR/MONITOR'S ACRONYM(S) 9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) SPONSOR/MONITOR'S REPORT NUMBER(S) DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution unlimited. SUPPLEMENTARY NOTES ABSTRACTWe have demonstrated, for the first time, in situ neodymium (Nd) doping of gallium nitride GaN by plasma-assisted molecular beam epitaxy (PA-MBE). The Nd doping is controlled by the GaN growth conditions and the Nd effusion cell temperature. The Rutherford backscattering spectroscopy (RBS) and secondary ion mass spectrometry (SIMS) data indicated Nd doping as high as ~8 at. %, with no evidence of phase segregation identified by x-ray diffraction (XRD) for Nd up to ~1 at. %. The Nd incorporation reached a limit while maintaining crystal quality. Strong room-temperature (RT) luminescence corresponded to the three characteristic Nd emission multiplets, with the Stark energy levels resolved by photoluminescence (PL) and photoluminescence excitation (PLE). Although the 4f electrons were well shielded from the host material, we were still able to observe weak electron-phonon interactions. Spectral correlation of the multiplets for above (325 nm) and below (836 nm) GaN bandgap excitation implied enhanced substitutional doping at the Ga site. The highest RT PL intensities corresponded to a doping level between 0.1-1 at. %. The enhanced substitutional doping at the Ga site and low optical loss in waveguide structures suggests GaN:Nd with a high enough Nd concentration has significant potential for use in simple, area-scalable, RT, diode-pumped, solid-state high energy lasers (HELs). SUBJECT TERMSHigh energy laser, thermal conductivity, GaN, Nd, molecular beam epitaxy, Stark energy level, luminescence SECURITY CLASSIFICATION OF: 19a. NAME OF RESPONSIBLE PERSON

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“…It is an attractive alternative to InGaN for the red light LED, as the InN rich alloy has disappointingly low luminescence efficiency [44,45]. The active lumophore in the first successful GaN:Eu injection device [46] is the primary defect, Eu2, an isolated Eu ion located on a Ga site, EuGa [47,48].…”

Section: Gan Nanostructured Materials Dopingmentioning

confidence: 99%

Review of GaN Nanostructured Based Devices

Nahhas¹

2018

AJN

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This paper presents a review of recent advances of GaN based nanostructured materials and devices.GaN has gained substantial interest in the research area of wide band gap semiconductors due to its unique electrical, optical and structural properties. GaN nanostructured material exhibits many advantages for nanodevices due to its higher surface-to-volume ratio as compared to thin films. GaN nanostructured material has the ability to absorb ultraviolet (UV) radiation and immense in many optical applications. Recently, GaN nanostructured based devices have gained much attention due to their various potential applications. GaN as nanomaterial have been used in many devices such as UV photodetectors, light emitting diodes, solar cells and transistors. The recent aspects of GaN based devices are presented and discussed. The performance of several devices structures which has been demonstrated on GaN is reviewed. The structural, electrical, and optical properties are also reviewed.

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Rare earth doped III-nitrides for optoelectronics

Cited by 68 publications

References 61 publications

Efficient tight-binding approach for the study of strongly correlated systems

Efficient tight-binding approach for the study of strongly correlated systems

Rare-Earth Doped Gallium Nitride (GaN)- An Innovative Path Toward Area-scalable Solid-state High Energy Lasers Without Thermal Distortion

Review of GaN Nanostructured Based Devices

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