Rapid thermal synthesis of GaN nanocrystals and nanodisks

Sofer, Zdeněk; Sedmidubský, David; Huber, Štěpán; Šimek, Petr; Šaněk, Filip; Jankovský, Ondřej; Gregorová, Eva; Fiala, Roman; Matějková, Stanislava; Mikulics, M.

doi:10.1007/s11051-012-1411-6

Cited by 6 publications

(6 citation statements)

References 16 publications

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“…It can be seen from the SEM images that the nanoparticles grow preferentially along the a or b directions. This effect was also observed on GaN nanoparticles (Sofer et al 2013). A prolongation of the reaction time led to a decrease of the particle size, however, the dominating platelet shape of the nanoparticles persisted.…”

Section: Resultsmentioning

confidence: 56%

“…This phonon mode was reported for epitaxial layers in the Z(XX)Z geometry and is augmented by the presence of nitrogen vacancies (Inushima et al 1999). Nitrogen vacancies, commonly observed in A III nitrides nanopowders (Sofer et al 2013), lead to changes in Raman selection modes and the normally silent phonon modes are observed. Some authors also associate this phonon mode with second-order processes of acoustic phonons (Kaczmarczyk et al 2000).…”

Section: Resultsmentioning

confidence: 99%

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Synthesis of InN nanoparticles by rapid thermal ammonolysis

et al. 2014

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A III group nitrides have attracted a great deal of attention in the last decades due to their applications in modern microelectronic and optoelectronic devices. In this paper, simple and controllable methods for a synthesis of InN nanoparticles in the form of nanodisks and skeletal nanostructures are presented. Careful control of the experimental conditions is necessary, as the thermal stability of InN at elevated temperatures is low. The morphology of nanoparticles was investigated by scanning electron microscopy and transmission electron microscopy combined with selected area diffraction. Profile analysis of powder X-ray diffraction data shows that the apparent size of the crystals along [001] direction decreases from the size larger than 100 nm for the low temperature syntheses to about 65 nm for the high temperature ones. Structural properties were investigated using X-ray diffraction, Raman, and photoluminescence spectroscopy. Thermal stability was probed by differential scanning calorimetry coupled with thermogravimetry in Ar and air atmospheres. Chemical composition and purity of InN are strongly dependent on temperature and duration of the synthesis.

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Section: Resultsmentioning

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Synthesis of InN nanoparticles by rapid thermal ammonolysis

et al. 2014

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“…Their result was obtained for GaN nanocrystals with average diameter of 4.5 ± 1.6 nm. Luminescence results are more frequent but generally due to extrinsic factors, a wide variety of lineshapes and positions arise, making comparison with theory more difficult Thus, this study focuses on comparison with the available absorption result .…”

Section: Resultsmentioning

confidence: 99%

Electronic structure of a hydrogenated gallium nitride nanoparticle

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Aguiar

et al. 2015

Phys. Status Solidi B

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This paper investigates the geometrical, electronic, and optical properties of a Ga24N24H46 nanoparticle using Density Functional Theory (DFT). The results show that this nanoparticle maintains geometrical parameters very similar to those of the GaN crystal, although it was noticed that the bond length along the direction [0001] of the Ga24N24H46 nanoparticle is smaller than those of the base of the tetrahedron, which is the opposite of what occurs in the crystal. The bandgap of the passivated nanoparticle calculated with DFT is greater than that of the crystal, while an estimate for the hydrogen‐free Ga24N24 structure shows a much lower bandgap, in accordance with the literature. The simulation of the optical absorption spectra via Time‐Dependent DFT allowed the association of the spatial shape of electronic orbitals with particular transition energies. The highest occupied (HOMO) and lowest unoccupied (LUMO) electronic levels are located on the (0001) and (000‐1) surfaces of the particle, respectively, showing that the passivation of GaN nanoparticles should maintain its known photocatalytic activity, and that transition probability between those surface states is relatively low as compared to the HOMO‐4 and LUMO transitions at 4.16 eV. Results are compared with the available experimental data.

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“…18 In addition, other strategies, e.g. metalorganic vapor phase epitaxy 19 and rapid thermal ammonolysis of complex gallium uoride, 20,21 have been reported for the synthesis of GaN and doped GaN nanostructures.…”

Section: Introductionmentioning

confidence: 99%

“…According to these reports, it can be seen that the synthesis of GaN nanostructures always involves expensive and/or poisonous reagents, templates or substrates, and complicated processes. [18][19][20][21][22][23] It is known that the nitridation of Ga 2 O 3 represents a most simple strategy to free-standing GaN material. Theoretically, the morphology of parent Ga 2 O 3 material can be preserved under controlled nitridation conditions, which provides a top-down morphology control strategy to GaN.…”

Section: Introductionmentioning

confidence: 99%