β-Ga 2 O 3 microrods have received in the last years an increasing interest for their integration into solar blind / UV photodetectors and gas sensors. However, their synthesis using a low temperature chemical route in aqueous solution is still under development and the physicochemical processes at work have not been elucidated yet. Here, we develop a double-step process involving the growth of α-GaOOH microrods on silicon using chemical bath deposition and their further structural conversion into β-Ga 2 O 3 microrods by post-deposition thermal treatment. It is revealed that the concentration of gallium nitrate has a drastic effect to tune the morphology, dimensions (i.e. diameter and length), and density of α-GaOOH microrods over a broad range, governing in turn the morphological properties of β-Ga 2 O 3 microrods. The physicochemical processes in aqueous solution are investigated by thermodynamic computations yielding speciation diagrams of Ga(III) species and theoretical solubility plots of GaOOH(s). In particular, the qualitative evolution of the morphological properties of α-GaOOH microrods with the concentration of gallium nitrate is found to be correlated with the supersaturation in the bath and discussed in the light of the standard nucleation and growth theory. Interestingly, the structural conversion following the thermal treatment at 900 °C in air results in the formation of pure β-Ga 2 O 3 microrods without any residual minor phases and with tunable morphology and improved structural ordering. These findings reporting a double-step process to form high quality pure β-Ga 2 O 3 microrods on silicon open many perspectives for their integration onto a large number of substrates for solar blind / UV photo-detection and gas sensing.