Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx:H films deposited by electron cyclotron resonance

Abstract

The effect of rapid thermal annealing processes on the properties of SiO 2.0 and SiN 1.55 films was studied. The films were deposited at room temperature from N 2 and SiH 4 gas mixtures, and N 2 , O 2 , and SiH 4 gas mixtures, respectively, using the electron cyclotron resonance technique. The films were characterized by Fourier transform infrared spectroscopy ͑FTIR͒ and electron paramagnetic resonance spectroscopy. According to the FTIR characterization, the SiO 2.0 films show continuous stress relaxation for annealing temperatures between 600 and 1000°C. The properties of the films annealed at 900-1000°C are comparable to those of thermally grown ones. The density of defects shows a minimum value for annealing temperatures around 300-400°C, which is tentatively attributed to the passivation of the well-known EЈ center Si dangling bonds due to the formation of Si-H bonds. A very low density of defects (5ϫ10 16 cm Ϫ3 ) is observed over the whole annealing temperature range. For the SiN 1.55 films, the highest structural order is achieved for annealing temperatures of 900°C. For higher temperatures, there is a significant release of H from N-H bonds without any subsequent Si-N bond healing, which results in degradation of the structural properties of the film. A minimum in the density of defects is observed for annealing temperatures of 600°C. The behavior of the density of defects is governed by the presence of non-bonded H and Si-H bonds below the IR detection limit.

Freestanding silicon nanocrystals with extremely low defect content

“…Similar behavior is observed in the literature and is attributed to two mechanisms: (1) for changes in stoichiometry the main oxygen peak shifts towards higher wavenumbers, saturating at ∼1078.5 cm −1 for the stoichiometric SiO 2 , 42 and (2) for thin films of SiO 2 a similar shift and shoulder appearance is attributed to localized compressive stress and SiO 2 restructuring. 43 For the MIDD sample, a growth and shift of the main peak similar to those observed for the LIDD Si-NCs is observed during the induction period. However, after the induction period the higher frequency shoulder gradually overtakes the peak initially at 1026 cm −1 .…”

Effect of Ammonia Treatment on the Crystallization of Amorphous Silicon–Carbon–Nitrogen Ceramics Derived from Polymer Precursor Pyrolysis

“…1 more problematic. 29,30 (2) Crystallization Behavior As discussed in earlier publications, 7,8,23 as well as in the works of other researchers, 31,32 the crystallization behavior of Si-C-N ceramics proceeds via two types of mechanisms: (i) heterogeneous crystallization at the surface (exterior surfaces and interior surfaces, such as pore walls) and (ii) homogeneous crystallization inside the amorphous ceramic network. The former happens earlier (at lower temperature) than the latter.…”

Nanoindentation stress–strain curves of plasma-enhanced chemical vapor deposited silicon oxide thin films

“…Other identifiable main features in Fig. 7 include: 1) Si-O (bending mode), at around 810 cm − 1 [35]; 2) Si-O (stretching mode), at around 1100 cm − 1 with a "shoulder" [35]; and 3) H-O-H (water), at around 1600 cm − 1 [34].…”