Rapid isothermal annealing of ion implantation damage using a thermal radiation source

Abstract

The rapid annealing of ion implantation damage in silicon using the radiation from a graphite heater has been demonstrated. Complete 3-in.-diam wafers were annealed in a single 10-sec exposure with high activation for implants of boron (50 keV; 1×1015 cm−2) and moderate activation for high-dose arsenic implants (140 keV; 6×1015 cm−2). Dopant redistribution was ∼1000 Å for boron and ∼200 Å for arsenic. Leakage currents of implanted p+n and n+p diodes were comparable to those of furnace-annealed control wafers and indicate good crystallinity in the depletion region near the junction. Diode leakage uniformity across the wafers was also excellent. C-V measurements on oxides annealed by this technique showed flatband voltages within 0.5 V of those measured on control wafers. This method of annealing implant damage is a practical alternative to those involving more elaborate power sources such as lasers, electron beams, or high-intensity arc lamps.

The research progress of Si-based blocked-impurity-band infrared detecting materials and detectors

“…我们对高纯度单晶Si衬底进行As离子注入掺杂以获得 低电阻率的背电极层 [19] . 离子注入会使衬底晶格结构 受到损伤 [27] , 甚至形成无定形Si层, 因此离子注入后需 要对样品进行退火处理以消除缺陷、恢复Si晶格有序 结构 [28][29][30] . 我们向高纯Si中注入了两种不同剂量的As离子以 制备背电极, 注入浓度分别为5×10 15 cm −2 (#1)和 表 1 典型的Si:As BIB焦平面探测器特性 [15] [19] .…”

Isothermal Annealing of Ion Implanted Silicon With a Graphite Radiation Source

“…This system has been described previously by Downey et al [7] and is similar to the prototype system used by Fulks et al [6]. The infrared radiation is generated in a vacuum system using a resistively heated sheet of graphite whose temperature is determined with a thermocouple.…”

“…Large area raster scanned electron beams [2,3], high intensity arc lamps [4] and graphite strip heaters [5] have all been used. Varian has developed a system which uses infrared radiation from a resistively heated sheet of graphite to anneal ion implanted silicon [6][7][8][9]. The anneal occurs in a vacuum for exposure time of 5-45 sec.…”

PROPRIÉTÉS DES JONCTIONS p/n DANS LE SILICIUM OBTENUES PAR IMPLANTATION IONIQUE ET RECUIT RAPIDE

“…Pour rGduire la dur6e du sdjour 3 haute temperature et 6viter ces knconvgnients, diverses m6thodes de "recuit rapiden sont actuellement dtudides (r6f. [1][2][3][4][5][6]. Leur principe de base consiste h accdl6rer la croissance 6pitaxiale de la couche d4gradGe par implantation en portant celle-ci h trss haute tempsrature (21100°C) pendant un temps trss bref, au moyen d'une irradiation laser, d'un faisceau Qlectronique ou tout autre forme d16nergie.…”